High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

Yuichi Matsushima*, S. Akiba, Y. Kushiro

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


High-temperature, long-term life tests of GaInAs/Inp heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted with an activation energy of 0.7 ev.

Original languageEnglish
Pages (from-to)1013-1014
Number of pages2
JournalElectronics Letters
Issue number16
Publication statusPublished - 1988 Aug 4
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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