High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

Takashi Kobayashi; Shinpei Iijima; Atsushi Hiraiwa

High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

Takashi Kobayashi^*, Shinpei Iijima, Atsushi Hiraiwa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, E_c, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. E_c showed no decrease for Si films that contained as much as 2×10²¹ cm^-3 dopants. Conventional models cannot explain the high E_c. We proposed a new model in which defect reduction in grains lead to the high E_c on the highly-doped Si film.

Original language	English
Title of host publication	Conference on Solid State Devices and Materials
Editors	Anon
Place of Publication	Tokyo, Japan
Publisher	Publ by Business Cent for Acad Soc Japan
Pages	191-194
Number of pages	4
Publication status	Published - 1990
Externally published	Yes
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90/8/22 → 90/8/24

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{bf7b68d9ec254a3ea617930adae62453,

title = "High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si",

abstract = "A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.",

author = "Takashi Kobayashi and Shinpei Iijima and Atsushi Hiraiwa",

year = "1990",

language = "English",

pages = "191--194",

editor = "Anon",

booktitle = "Conference on Solid State Devices and Materials",

publisher = "Publ by Business Cent for Acad Soc Japan",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - GEN

T1 - High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

AU - Kobayashi, Takashi

AU - Iijima, Shinpei

AU - Hiraiwa, Atsushi

PY - 1990

Y1 - 1990

N2 - A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

AB - A high reliability poly-oxide was obtained by oxidizing in-situ phosphorus doped amorphous silicon. Critical electric field, Ec, of the poly-oxide increased with dopant concentration, and reached 7.5MV/cm, which is comparable to the oxide of single crystalline Si. Ec showed no decrease for Si films that contained as much as 2×1021 cm-3 dopants. Conventional models cannot explain the high Ec. We proposed a new model in which defect reduction in grains lead to the high Ec on the highly-doped Si film.

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UR - http://www.scopus.com/inward/citedby.url?scp=0025554224&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025554224

SP - 191

EP - 194

BT - Conference on Solid State Devices and Materials

A2 - Anon, null

PB - Publ by Business Cent for Acad Soc Japan

CY - Tokyo, Japan

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

High reliability poly-oxide grown on in-situ phosphorus doped amorphous Si

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ASJC Scopus subject areas

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