High-resolution electron microscope study of the PtSi-Si(111) interface

H. Kawarada, M. Ishida, J. Nakanishi, I. Ohdomari, S. Horiuchi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The atomic arrangement of the PtSi-Si(111) interface and epitaxial growth of PtSi on Si(111) have been investigated using lattice imaging. Small PtSi domains (20–40nm) which have three equivalent positions on Si(111) grow epitaxially all over the substrate with an atomically uneven interface. However, the transition from a PtSi lattice to a Si lattice is abrupt. The interface has atomic steps, which have been verified by image simulations at the interface. Atomic-scale models of the interface consistent with the observed lattice images have been derived. In the proposed models, inclined interfaces increase the local coherency between PtSi and Si. The validity of the models has been examined by classical ideas of interphase boundaries.

Original languageEnglish
Pages (from-to)729-741
Number of pages13
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number5
Publication statusPublished - 1986 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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