High-resolution Schottky CdTe diode detector

Tadayuki Takahashi*, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

99 Citations (Scopus)


We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thickness, the high bias voltage results in a high electric field in the device. Both the improved charge-collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV full-width at half-maximum at 60 keV for a 2 × 2 mm2 device without any charge-loss correction electronics. Large-area detectors with dimensions of 21 × 21 mm2 are now available with an energy resolution of ∼ 2.8 keV. Long-term stability can be easily attained for relatively thin (< 1 mm) detectors if they are cooled or operated under a high bias voltage.

Original languageEnglish
Pages (from-to)1297-1303
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume49 II
Issue number3
Publication statusPublished - 2002 Jun


  • CdTe
  • CdZnTe
  • Gamma-ray
  • Pixel detector
  • X-ray

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering


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