High resolution Schottky CdTe diode detector

Tadayuki Takahashi; Takefumi Mitani; Yoshihito Kobayashi; Manabu Kouda; Goro Sato; Shin Watanabe; Kazuhiro Nakazawa; Yuu Okada; Minoru Funaki; Ryoichi Ohno; Kunishiro Mori

High resolution Schottky CdTe diode detector

Tadayuki Takahashi^*, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm ² device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm ² are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.

Original language	English
Title of host publication	IEEE Nuclear Science Symposium and Medical Imaging Conference
Pages	2464-2468
Number of pages	5
Volume	4
Publication status	Published - 2002
Event	2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA Duration: 2001 Nov 4 → 2001 Nov 10

Other

Other	2001 IEEE Nuclear Science Symposium Conference Record
City	San Diego, CA
Period	01/11/4 → 01/11/10

Keywords

CdTe
CdZnTe
Pixel detector

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Industrial and Manufacturing Engineering

Cite this

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title = "High resolution Schottky CdTe diode detector",

abstract = "We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm 2 device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm 2 are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.",

keywords = "CdTe, CdZnTe, Pixel detector",

author = "Tadayuki Takahashi and Takefumi Mitani and Yoshihito Kobayashi and Manabu Kouda and Goro Sato and Shin Watanabe and Kazuhiro Nakazawa and Yuu Okada and Minoru Funaki and Ryoichi Ohno and Kunishiro Mori",

year = "2002",

language = "English",

volume = "4",

pages = "2464--2468",

booktitle = "IEEE Nuclear Science Symposium and Medical Imaging Conference",

note = "2001 IEEE Nuclear Science Symposium Conference Record ; Conference date: 04-11-2001 Through 10-11-2001",

}

TY - GEN

T1 - High resolution Schottky CdTe diode detector

AU - Takahashi, Tadayuki

AU - Mitani, Takefumi

AU - Kobayashi, Yoshihito

AU - Kouda, Manabu

AU - Sato, Goro

AU - Watanabe, Shin

AU - Nakazawa, Kazuhiro

AU - Okada, Yuu

AU - Funaki, Minoru

AU - Ohno, Ryoichi

AU - Mori, Kunishiro

PY - 2002

Y1 - 2002

N2 - We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm 2 device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm 2 are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.

AB - We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm 2 device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm 2 are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.

KW - CdTe

KW - CdZnTe

KW - Pixel detector

UR - http://www.scopus.com/inward/record.url?scp=0035555108&partnerID=8YFLogxK

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M3 - Conference contribution

AN - SCOPUS:0035555108

VL - 4

SP - 2464

EP - 2468

BT - IEEE Nuclear Science Symposium and Medical Imaging Conference

T2 - 2001 IEEE Nuclear Science Symposium Conference Record

Y2 - 4 November 2001 through 10 November 2001

ER -

High resolution Schottky CdTe diode detector

Abstract

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Keywords

ASJC Scopus subject areas

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