High resolution Schottky CdTe diode detector

Tadayuki Takahashi*, Takefumi Mitani, Yoshihito Kobayashi, Manabu Kouda, Goro Sato, Shin Watanabe, Kazuhiro Nakazawa, Yuu Okada, Minoru Funaki, Ryoichi Ohno, Kunishiro Mori

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


We describe recent progress on the use of Schottky CdTe diode detectors for spectrometry. The low leakage current of the CdTe diode allows us to apply a much higher bias voltage than was possible with previous CdTe detectors. For a relatively thin detector of 0.5-1 mm thick, the high bias voltage results in a high electric field in the device. Both the improved charge collection efficiency and the low-leakage current lead to an energy resolution of better than 600 eV FWHM at 60 keV for a 2×2 mm 2 device without any charge-loss correction electronics. Large area detectors with dimensions of 21×21 mm 2 are now available with an energy resolution of ∼2.8 keV. Long term stability can be easily attained for relatively thin (< 1 mm) detectors, if they are cooled or operated under a high bias voltage.

Original languageEnglish
Title of host publicationIEEE Nuclear Science Symposium and Medical Imaging Conference
Number of pages5
Publication statusPublished - 2002
Event2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA
Duration: 2001 Nov 42001 Nov 10


Other2001 IEEE Nuclear Science Symposium Conference Record
CitySan Diego, CA


  • CdTe
  • CdZnTe
  • Pixel detector

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Industrial and Manufacturing Engineering


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