High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

A. Yoshikawa; Z. X. Qin; H. Nagano; Y. Sugure; A. W. Jia; M. Kobayashi; M. Shimotomai; Y. Kato; K. Takahashi

doi:10.1557/proc-482-465

High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

A. Yoshikawa^*, Z. X. Qin, H. Nagano, Y. Sugure, A. W. Jia, M. Kobayashi, M. Shimotomai, Y. Kato, K. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×10³.

Original language	English
Pages (from-to)	465-470
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-465
Publication status	Published - 1997 Jan 1
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: 1997 Dec 1 → 1997 Dec 4

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Yoshikawa, A., Qin, Z. X., Nagano, H., Sugure, Y., Jia, A. W., Kobayashi, M., Shimotomai, M., Kato, Y., & Takahashi, K. (1997). High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. Materials Research Society Symposium - Proceedings, 482, 465-470. https://doi.org/10.1557/proc-482-465

High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'. / Yoshikawa, A.; Qin, Z. X.; Nagano, H. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 482, 01.01.1997, p. 465-470.

Research output: Contribution to journal › Conference article › peer-review

Yoshikawa, A, Qin, ZX, Nagano, H, Sugure, Y, Jia, AW, Kobayashi, M, Shimotomai, M, Kato, Y & Takahashi, K 1997, 'High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'', Materials Research Society Symposium - Proceedings, vol. 482, pp. 465-470. https://doi.org/10.1557/proc-482-465

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title = "High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'",

abstract = "Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.",

author = "A. Yoshikawa and Qin, {Z. X.} and H. Nagano and Y. Sugure and Jia, {A. W.} and M. Kobayashi and M. Shimotomai and Y. Kato and K. Takahashi",

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doi = "10.1557/proc-482-465",

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AU - Yoshikawa, A.

AU - Qin, Z. X.

AU - Nagano, H.

AU - Sugure, Y.

AU - Jia, A. W.

AU - Kobayashi, M.

AU - Shimotomai, M.

AU - Kato, Y.

AU - Takahashi, K.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.

AB - Cubic GaN (c-GaN) layers were grown by rf-plasma source MBE on (001) GaAs prepared by atomic-hydrogen treatment at `high temperatures', and the structural properties of the epilayers were investigated by the high-resolution X-ray rocking curve and the reciprocal space mapping measurements. The growth temperature was varied from 620 to 740 °C. It was found that single domain `device-quality' c-GaN layers could be grown for the first time; the FWHM of the X-ray rocking curves for the (002) c-GaN could be as small as 70-90 arcsec and the inclusion of h-GaN phase in the c-GaN epilayers grown at temperatures above 680 °C could be less than 4×103.

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High-resolution X-ray diffraction analysis of `device-quality' cubic GaN grown on (001) GaAs substrate prepared by atomic-hydrogen treatment at `high temperatures'

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