High room-temperature hole concentrations above 1019 cm-3 in Mg-doped InGaN/GaN superlattices

K. Kumakura*, T. Makimoto, N. Kobayashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)


We achieved high hole concentrations above 1019 cm3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN/GaN superlattices increased With the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices With higher In mole fractions indicates highly efficient hole generation in the superlattice.

Original languageEnglish
Pages (from-to)T5111-T5116
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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