High-speed electro-absorption semiconductor light modulator for soliton pulse generators

Yuichi Matsushima; Masatoshi Suzuki; Hideaki Tanaka; Yukitoshi Takahashi

High-speed electro-absorption semiconductor light modulator for soliton pulse generators

Yuichi Matsushima^*, Masatoshi Suzuki, Hideaki Tanaka, Yukitoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A simple and stable technique of optical short pulse generation for soliton transmission based on an electro-absorption (E-A) modulator is presented. By using the nonlinearity of the absorption characteristics of the modulator, ultrashort optical pulse trains having a shape close to a sech² shape can be generated just with sinusoidal modulation. Quasi-transform-limited optical pulses with a time-bandwidth product of 0.32 were successfully generated by the sinusoidally driven InGaAsP E-A modulator up to a 20 GHz repetition rate. The high quality of the modulator-generated pulses has been proven by long-distance soliton transmissions. As for the applications of this scheme, a λ/4-shifted DFB laser/E-A modulator integrated light source and a tandem-integrated E-A modulator (TEAM) to form a single-chip soliton transmitter are also described.

Original language	English
Pages (from-to)	75-88
Number of pages	14
Journal	Optoelectronics Tokyo
Volume	10
Issue number	1
Publication status	Published - 1995 Mar
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "High-speed electro-absorption semiconductor light modulator for soliton pulse generators",

abstract = "A simple and stable technique of optical short pulse generation for soliton transmission based on an electro-absorption (E-A) modulator is presented. By using the nonlinearity of the absorption characteristics of the modulator, ultrashort optical pulse trains having a shape close to a sech2 shape can be generated just with sinusoidal modulation. Quasi-transform-limited optical pulses with a time-bandwidth product of 0.32 were successfully generated by the sinusoidally driven InGaAsP E-A modulator up to a 20 GHz repetition rate. The high quality of the modulator-generated pulses has been proven by long-distance soliton transmissions. As for the applications of this scheme, a λ/4-shifted DFB laser/E-A modulator integrated light source and a tandem-integrated E-A modulator (TEAM) to form a single-chip soliton transmitter are also described.",

author = "Yuichi Matsushima and Masatoshi Suzuki and Hideaki Tanaka and Yukitoshi Takahashi",

year = "1995",

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T1 - High-speed electro-absorption semiconductor light modulator for soliton pulse generators

AU - Matsushima, Yuichi

AU - Suzuki, Masatoshi

AU - Tanaka, Hideaki

AU - Takahashi, Yukitoshi

PY - 1995/3

Y1 - 1995/3

N2 - A simple and stable technique of optical short pulse generation for soliton transmission based on an electro-absorption (E-A) modulator is presented. By using the nonlinearity of the absorption characteristics of the modulator, ultrashort optical pulse trains having a shape close to a sech2 shape can be generated just with sinusoidal modulation. Quasi-transform-limited optical pulses with a time-bandwidth product of 0.32 were successfully generated by the sinusoidally driven InGaAsP E-A modulator up to a 20 GHz repetition rate. The high quality of the modulator-generated pulses has been proven by long-distance soliton transmissions. As for the applications of this scheme, a λ/4-shifted DFB laser/E-A modulator integrated light source and a tandem-integrated E-A modulator (TEAM) to form a single-chip soliton transmitter are also described.

AB - A simple and stable technique of optical short pulse generation for soliton transmission based on an electro-absorption (E-A) modulator is presented. By using the nonlinearity of the absorption characteristics of the modulator, ultrashort optical pulse trains having a shape close to a sech2 shape can be generated just with sinusoidal modulation. Quasi-transform-limited optical pulses with a time-bandwidth product of 0.32 were successfully generated by the sinusoidally driven InGaAsP E-A modulator up to a 20 GHz repetition rate. The high quality of the modulator-generated pulses has been proven by long-distance soliton transmissions. As for the applications of this scheme, a λ/4-shifted DFB laser/E-A modulator integrated light source and a tandem-integrated E-A modulator (TEAM) to form a single-chip soliton transmitter are also described.

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High-speed electro-absorption semiconductor light modulator for soliton pulse generators

Abstract

ASJC Scopus subject areas

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