High-speed growth of 4H-SiC single crystal using Si-Cr based melt

M. Kado; H. Daikoku; H. Sakamoto; H. Suzuki; T. Bessho; N. Yashiro; K. Kusunoki; N. Okada; K. Moriguchi; K. Kamei

doi:10.4028/www.scientific.net/MSF.740-742.73

High-speed growth of 4H-SiC single crystal using Si-Cr based melt

M. Kado^*, H. Daikoku, H. Sakamoto, H. Suzuki, T. Bessho, N. Yashiro, K. Kusunoki, N. Okada, K. Moriguchi, K. Kamei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

53 Citations (Scopus)

Abstract

In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and super saturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of the seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.

Original language	English
Title of host publication	Materials Science Forum
Pages	73-76
Number of pages	4
Volume	740-742
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.740-742.73
Publication status	Published - 2013
Externally published	Yes
Event	9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation Duration: 2012 Sept 2 → 2012 Sept 6

Publication series

Name	Materials Science Forum
Volume	740-742
ISSN (Print)	02555476

Other

Other	9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
Country/Territory	Russian Federation
City	St. Petersburg
Period	12/9/2 → 12/9/6

Keywords

4H-SiC
Bulk growth
Growth rate
Solution growth

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

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Cite this

Kado, M, Daikoku, H, Sakamoto, H, Suzuki, H, Bessho, T, Yashiro, N, Kusunoki, K, Okada, N, Moriguchi, K & Kamei, K 2013, High-speed growth of 4H-SiC single crystal using Si-Cr based melt. in Materials Science Forum. vol. 740-742, Materials Science Forum, vol. 740-742, pp. 73-76, 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 12/9/2. https://doi.org/10.4028/www.scientific.net/MSF.740-742.73

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abstract = "In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and super saturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of the seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.",

keywords = "4H-SiC, Bulk growth, Growth rate, Solution growth",

author = "M. Kado and H. Daikoku and H. Sakamoto and H. Suzuki and T. Bessho and N. Yashiro and K. Kusunoki and N. Okada and K. Moriguchi and K. Kamei",

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AU - Kado, M.

AU - Daikoku, H.

AU - Sakamoto, H.

AU - Suzuki, H.

AU - Bessho, T.

AU - Yashiro, N.

AU - Kusunoki, K.

AU - Okada, N.

AU - Moriguchi, K.

AU - Kamei, K.

PY - 2013

Y1 - 2013

N2 - In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and super saturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of the seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.

AB - In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and super saturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of the seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.

KW - 4H-SiC

KW - Bulk growth

KW - Growth rate

KW - Solution growth

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SN - 9783037856246

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T3 - Materials Science Forum

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BT - Materials Science Forum

T2 - 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012

Y2 - 2 September 2012 through 6 September 2012

ER -

High-speed growth of 4H-SiC single crystal using Si-Cr based melt

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Keywords

ASJC Scopus subject areas

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