High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Y. Matsushima; S. Akiba; K. Sakai; Y. Kushiro; Y. Noda; K. Utaka

doi:10.1049/el:19820649

High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Y. Matsushima, S. Akiba, K. Sakai, Y. Kushiro, Y. Noda, K. Utaka

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

Original language	English
Pages (from-to)	945-946
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	22
DOIs	https://doi.org/10.1049/el:19820649
Publication status	Published - 1982 Oct 28
Externally published	Yes

Keywords

Photodiodes
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19820649

Cite this

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abstract = "The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.",

keywords = "Photodiodes, Semiconductor devices and materials",

author = "Y. Matsushima and S. Akiba and K. Sakai and Y. Kushiro and Y. Noda and K. Utaka",

year = "1982",

month = oct,

day = "28",

doi = "10.1049/el:19820649",

language = "English",

volume = "18",

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journal = "Electronics Letters",

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T1 - High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

AU - Matsushima, Y.

AU - Akiba, S.

AU - Sakai, K.

AU - Kushiro, Y.

AU - Noda, Y.

AU - Utaka, K.

PY - 1982/10/28

Y1 - 1982/10/28

N2 - The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

AB - The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.

KW - Photodiodes

KW - Semiconductor devices and materials

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U2 - 10.1049/el:19820649

DO - 10.1049/el:19820649

M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers

Abstract

Keywords

ASJC Scopus subject areas

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