High-temperature (300 °C) operation of npn-type GaN/InGaN double heterojunction bipolar transistors

Atsushi Nishikawa*, Kazuhide Kumakura, Makoto Kasu, Toshiki Makimoto

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

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Physics & Astronomy