TY - JOUR
T1 - High-temperature dielectric responses in all-nanosheet capacitors
AU - Khan, Muhammad Shuaib
AU - Osada, Minoru
AU - Kim, Hyung Jun
AU - Ebina, Yasuo
AU - Sugimoto, Wataru
AU - Sasaki, Takayoshi
PY - 2017/6/1
Y1 - 2017/6/1
N2 - We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95O2 as electrodes and dielectric Ca2Nb3O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high-k dielectric response (>155) and a moderate insulation resistance (>1 ' 10%5A/cm2) at high temperatures up to 200 °C. The concomitant presence of high ϵr, low leakage profile, and thermal stability in high-k nanocapacitors is critically important for application in high-temperature electronics.
AB - We have investigated high-temperature dielectric responses of layer-by-layer assembled nanosheet capacitors. All-nanosheet capacitors are fabricated by stacking metallic Ru0.95O2 as electrodes and dielectric Ca2Nb3O10 nanosheets as insulators. Through in situ characterizations, we find that all-nanosheet capacitors exhibit a size-free high-k dielectric response (>155) and a moderate insulation resistance (>1 ' 10%5A/cm2) at high temperatures up to 200 °C. The concomitant presence of high ϵr, low leakage profile, and thermal stability in high-k nanocapacitors is critically important for application in high-temperature electronics.
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U2 - 10.7567/JJAP.56.06GH09
DO - 10.7567/JJAP.56.06GH09
M3 - Article
AN - SCOPUS:85020532261
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 06GH09
ER -