High-temperature fabrication of Ag(In,Ga)Se2 thin films for applications in solar cells

Xianfeng Zhang*, Akira Yamada, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Molecular beam epitaxy was used to fabricate Ag(In,Ga)Se2 (AIGS) thin films. To improve the diffusion of Ag, high-temperature deposition and high-temperature annealing methods were applied to fabricate AIGS films. The as-grown AIGS thin films were then used to make AIGS solar cells. We found that grain size and crystallinity of AIGS films were considerably improved by increasing the deposition and annealing temperature. For high-temperature deposition, temperatures over 600 °C led to decomposition of the AIGS film, desorption of In, and deterioration of its crystallinity. The most appropriate deposition temperature was 590 °C and a solar cell with a power conversion efficiency of 4.1% was obtained. High-temperature annealing of the AIGS thin films showed improved crystallinity as annealing temperature was increased and film decomposition and In desorption were prevented. A solar cell based on this film showed the highest conversion efficiency of 6.4% when annealed at 600 °C. When the annealing temperature was further increased to 610 °C, the performance of the cell deteriorated due to loss of the out-of-plane Ga gradient.

Original languageEnglish
Article number1700042
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number10
Publication statusPublished - 2017 Oct


  • Ag(In,Ga)Se
  • molecular beam epitaxy
  • solar cells
  • thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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