TY - JOUR
T1 - High temperature hydrogen gas sensing property of GaN prepared from Α-GaOOH
AU - Hermawan, Angga
AU - Asakura, Yusuke
AU - Kobayashi, Makoto
AU - Kakihana, Masato
AU - Yin, Shu
N1 - Funding Information:
The authors acknowledgethe support from the JSPS KAKENHI Grant Number JP16H06439 (Grant-in-Aid for Scientific Research on Innovative Areas), and the Dynamic Alliance for Open Innovations Bridging Human, Environment and Materials , the Cooperative Research Program of “Network Joint Research Center for Materials and Devices” .
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/12/10
Y1 - 2018/12/10
N2 - Extremely stable gas sensors at elevated temperature (T > 400 °C) with rapid detection of hydrogen gas are urgently demanded especially for hydrogen production industry which typically involves a high-temperature system. Gallium nitride (GaN) possesses excellent physicochemical properties and is expected to be one candidate for high temperature gas sensor. In this work, the GaN preparation from α–GaOOH precursors by a direct nitridation method under NH3 flow is presented. The nitridation was done at various temperatures to obtain GaN with different oxygen contents, which played a vital role in gas sensing response of thick film GaN in various concentration of H2 gas at 500 °C. The sensitivity of the obtained GaN with 2.07 wt.% of oxygen content was 10 times higher than that sample with the lowest oxygen content (1.9 wt.%) and the sensitivity drastically decreased when the oxygen content was 2.53 wt.%. The sensors also demonstrated high stability as indicated by their repeatable feature after being exposed at a various concentration of H2 (150–750 ppm). Furthermore, the GaN showed higher sensitivity than that of β–Ga2O3 sensor.
AB - Extremely stable gas sensors at elevated temperature (T > 400 °C) with rapid detection of hydrogen gas are urgently demanded especially for hydrogen production industry which typically involves a high-temperature system. Gallium nitride (GaN) possesses excellent physicochemical properties and is expected to be one candidate for high temperature gas sensor. In this work, the GaN preparation from α–GaOOH precursors by a direct nitridation method under NH3 flow is presented. The nitridation was done at various temperatures to obtain GaN with different oxygen contents, which played a vital role in gas sensing response of thick film GaN in various concentration of H2 gas at 500 °C. The sensitivity of the obtained GaN with 2.07 wt.% of oxygen content was 10 times higher than that sample with the lowest oxygen content (1.9 wt.%) and the sensitivity drastically decreased when the oxygen content was 2.53 wt.%. The sensors also demonstrated high stability as indicated by their repeatable feature after being exposed at a various concentration of H2 (150–750 ppm). Furthermore, the GaN showed higher sensitivity than that of β–Ga2O3 sensor.
KW - Direct nitridation
KW - GaN
KW - High-temperature sensing
KW - Hydrogen gas sensor
KW - α–GaOOH
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U2 - 10.1016/j.snb.2018.08.021
DO - 10.1016/j.snb.2018.08.021
M3 - Article
AN - SCOPUS:85052659517
SN - 0925-4005
VL - 276
SP - 388
EP - 396
JO - Sensors and Actuators B: Chemical
JF - Sensors and Actuators B: Chemical
ER -
