High-temperature interlayer magnetoresistance in La5Mo 4O16

K. Kobayashi, T. Katsufuji*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We found that La5Mo4O16 with Mo4 + and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.

Original languageEnglish
Article number100411
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number10
Publication statusPublished - 2011 Mar 31

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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