High-temperature interlayer magnetoresistance in La5Mo 4O16

K. Kobayashi; T. Katsufuji

doi:10.1103/PhysRevB.83.100411

High-temperature interlayer magnetoresistance in La₅Mo ₄O₁₆

K. Kobayashi, T. Katsufuji^*

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We found that La₅Mo₄O₁₆ with Mo4 ⁺ and Mo5⁺ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature T_AF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below T_F=70 K, where spontaneous magnetization appears.

Original language	English
Article number	100411
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.83.100411
Publication status	Published - 2011 Mar 31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.83.100411

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title = "High-temperature interlayer magnetoresistance in La5Mo 4O16",

abstract = "We found that La5Mo4O16 with Mo4 + and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.",

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N2 - We found that La5Mo4O16 with Mo4 + and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.

AB - We found that La5Mo4O16 with Mo4 + and Mo5+ ions (S=1 and S=1/2 spins) on a quasisquare lattice exhibits a distinct magnetoresistance for the current perpendicular to the square-lattice layers below the antiferromagnetic ordering temperature TAF=190 K. This magnetoresistance occurs well below 1 T, and can be attributed to a metamagnetic transition from antiferromagnetically aligned moments between the layers to ferromagnetically aligned ones. The magnetoresistance changes its characteristic with the change of the magnetic state below TF=70 K, where spontaneous magnetization appears.

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High-temperature interlayer magnetoresistance in La₅Mo ₄O₁₆

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