High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET

Shaili Falina, Hiroshi Kawarada, Asrulnizam Abd Manaf*, Mohd Syamsul*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

This letter reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths ( {LGD) and a thick Al2O3 passivation layer of 400 nm. Voltage breakdowns of more than 1000 V have been observed in high voltage measurements. The temperature dependence and performance of the devices at RT to 673 K were also shown. As the temperature was varied, the maximum drain currents ( {I}D max}} ) for different {LGD} devices increased significantly from 33.8 mA/mm - 72.8 mA / mm to 86.0 mA/mm - 116.4 mA / mm in terms of absolute values. The findings demonstrate the advantages and potential of diamond-based devices in high temperature conditions.

Original languageEnglish
Pages (from-to)1101-1104
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number7
DOIs
Publication statusPublished - 2022 Jul 1

Keywords

  • Diamond
  • FETs
  • high temperature
  • high voltage
  • two-dimensional hole gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET'. Together they form a unique fingerprint.

Cite this