High-temperature-resistant interconnection using nickel nanoparticles

Yasunori Tanaka, Suguru Hashimoto, Tomonori Iizuka, Kohei Tatsumi, Norie Matsubara, Shinji Ishikawa, Masamoto Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)


The bonding characteristics of nickel nanoparticles as a new alternative bonding material for high-temperature soldering was considered and a high bonding strength was achieved at a bonding temperature of 300°C. It was also revealed in a bonding experiment using a silicon dummy chip with a deposited aluminum layer that direct bonding to an aluminum electrode was possible. On the other hand, a stress-relaxation structure using a metal film was presented as a new structure for resolving the problem of deteriorating bonding reliability due to thermal stress arising from differences in the coefficient of thermal expansion between the chip and the substrate. A silicon carbide device was assembled using the new bonding method and an operating test was performed to verify normal operation in a high-temperature environment of approximately 300°C.

Original languageEnglish
Title of host publicationProceedings - 2014 47th International Symposium on Microelectronics, IMAPS 2014
PublisherIMAPS-International Microelectronics and Packaging Society
Number of pages5
ISBN (Print)9780990902805
Publication statusPublished - 2014
Event47th International Symposium on Microelectronics: Future of Packaging, IMAPS 2014 - San Diego, United States
Duration: 2014 Oct 132014 Oct 16


Other47th International Symposium on Microelectronics: Future of Packaging, IMAPS 2014
Country/TerritoryUnited States
CitySan Diego


  • High temperature resistant packaging
  • Nickel nanoparticles
  • Power device interconnection

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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