High-temperature thermoelectric properties of delafossite oxide CuRh 1-xMgxO2

H. Kuriyama; M. Nohara; T. Sasagawa; K. Takubo; T. Mizokawa; K. Kimura; H. Takagi

doi:10.1109/ICT.2006.331289

High-temperature thermoelectric properties of delafossite oxide CuRh _1-xMg_xO₂

H. Kuriyama^*, M. Nohara, T. Sasagawa, K. Takubo, T. Mizokawa, K. Kimura, H. Takagi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

We report high temperature thermoelectric properties of doped delafossite oxide CuRh_0.9Mg_0.1O₂. The parent compound CuRhO₂ is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh_0.9Mg_0.1O ₂ shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.

Original language	English
Title of host publication	Proceedings ICT'06 - 25th International Conference on Thermoelectrics
Pages	97-98
Number of pages	2
DOIs	https://doi.org/10.1109/ICT.2006.331289
Publication status	Published - 2006 Dec 1
Externally published	Yes
Event	ICT'06 - 25th International Conference on Thermoelectrics - Vienna, Austria Duration: 2006 Aug 6 → 2006 Aug 10

Publication series

Name	International Conference on Thermoelectrics, ICT, Proceedings

Other

Other	ICT'06 - 25th International Conference on Thermoelectrics
Country/Territory	Austria
City	Vienna
Period	06/8/6 → 06/8/10

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ICT.2006.331289

Cite this

Kuriyama, H., Nohara, M., Sasagawa, T., Takubo, K., Mizokawa, T., Kimura, K., & Takagi, H. (2006). High-temperature thermoelectric properties of delafossite oxide CuRh _1-xMg_xO₂. In Proceedings ICT'06 - 25th International Conference on Thermoelectrics (pp. 97-98). Article 4133245 (International Conference on Thermoelectrics, ICT, Proceedings). https://doi.org/10.1109/ICT.2006.331289

High-temperature thermoelectric properties of delafossite oxide CuRh _1-xMg_xO₂. / Kuriyama, H.; Nohara, M.; Sasagawa, T. et al.
Proceedings ICT'06 - 25th International Conference on Thermoelectrics. 2006. p. 97-98 4133245 (International Conference on Thermoelectrics, ICT, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuriyama, H, Nohara, M, Sasagawa, T, Takubo, K, Mizokawa, T, Kimura, K & Takagi, H 2006, High-temperature thermoelectric properties of delafossite oxide CuRh _1-xMg_xO₂. in Proceedings ICT'06 - 25th International Conference on Thermoelectrics., 4133245, International Conference on Thermoelectrics, ICT, Proceedings, pp. 97-98, ICT'06 - 25th International Conference on Thermoelectrics, Vienna, Austria, 06/8/6. https://doi.org/10.1109/ICT.2006.331289

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abstract = "We report high temperature thermoelectric properties of doped delafossite oxide CuRh0.9Mg0.1O2. The parent compound CuRhO2 is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh0.9Mg0.1O 2 shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.",

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AU - Kuriyama, H.

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AU - Mizokawa, T.

AU - Kimura, K.

AU - Takagi, H.

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N2 - We report high temperature thermoelectric properties of doped delafossite oxide CuRh0.9Mg0.1O2. The parent compound CuRhO2 is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh0.9Mg0.1O 2 shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.

AB - We report high temperature thermoelectric properties of doped delafossite oxide CuRh0.9Mg0.1O2. The parent compound CuRhO2 is a band insulator and becomes metallic upon Mg doping for Rh. We found that polycrystalline CuRh0.9Mg0.1O 2 shows a large thermoelectric power S ∼ +270 μV/K despite its low resistivity ∼ 6 mΩcm at high temperatures around 1000 K. Combining these with a thermal conductivity κ ∼ 80 mW/cm K, we estimate a large dimensionless figure of merit ZT ∼ 0.15 at 1000 K.

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