High Tc/high coupling perovskite thin films

K. Wasa; T. Matsushima; H. Adachi; T. Matsunaga; T. Yanagitani; T. Yamamoto

doi:10.1109/ISAF.2014.6923017

High T_c/high coupling perovskite thin films

K. Wasa^*, T. Matsushima, H. Adachi, T. Matsunaga, T. Yanagitani, T. Yamamoto

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Ferroelectric thin films with high Curie temperature T_c and high piezoelectric coupling factor k are fascinated for a better piezoelectric MEMS. Pb(Zr, Ti)O₃ (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, but the T_c is not high, i.e. T_c <400°C. PZT-based piezoelectric thin films with higher T_c will be much useful. Based on a strain engineering, it is commonly understood the in-plane biaxial strain enhances the T_c of PZT thin films in a laminated composite structure. However, thickness of the PZT thin films is limited below a critical thickness typically < 50nm. Recently it has been found in-plane relaxed single crystal PZT-based thin films, i.e. PMnN-PZT(48/52) thin films, thickness above the critical thickness (typically 1μm), exhibited enhanced T_c The T_c is extraordinary high, T_c = 600°C. Their ferroelectric performances are beyond bulk PZT. The high T_c phenomena are demonstrated and the possible mechanisms of the high T_c behavior are discussed.

Original language	English
Title of host publication	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479938605
DOIs	https://doi.org/10.1109/ISAF.2014.6923017
Publication status	Published - 2014 Oct 13
Externally published	Yes
Event	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014 - State College, United States Duration: 2014 May 12 → 2014 May 16

Publication series

Name	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014

Other

Other	2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014
Country/Territory	United States
City	State College
Period	14/5/12 → 14/5/16

Keywords

PMnN-PZT thin films
high Curie temperature
high piezoelectric coupling
sputtered heteroepitaxial thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2014.6923017

Cite this

Wasa, K., Matsushima, T., Adachi, H., Matsunaga, T., Yanagitani, T., & Yamamoto, T. (2014). High T_c/high coupling perovskite thin films. In 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014 Article 6923017 (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.2014.6923017

High T_c/high coupling perovskite thin films. / Wasa, K.; Matsushima, T.; Adachi, H. et al.
2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 6923017 (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wasa, K, Matsushima, T, Adachi, H, Matsunaga, T, Yanagitani, T & Yamamoto, T 2014, High T_c/high coupling perovskite thin films. in 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014., 6923017, 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014, Institute of Electrical and Electronics Engineers Inc., 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014, State College, United States, 14/5/12. https://doi.org/10.1109/ISAF.2014.6923017

Wasa K, Matsushima T, Adachi H, Matsunaga T, Yanagitani T, Yamamoto T. High T_c/high coupling perovskite thin films. In 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 6923017. (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014). doi: 10.1109/ISAF.2014.6923017

Wasa, K. ; Matsushima, T. ; Adachi, H. et al. / High T_c/high coupling perovskite thin films. 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014).

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abstract = "Ferroelectric thin films with high Curie temperature Tc and high piezoelectric coupling factor k are fascinated for a better piezoelectric MEMS. Pb(Zr, Ti)O3 (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, but the Tc is not high, i.e. Tc <400°C. PZT-based piezoelectric thin films with higher Tc will be much useful. Based on a strain engineering, it is commonly understood the in-plane biaxial strain enhances the Tc of PZT thin films in a laminated composite structure. However, thickness of the PZT thin films is limited below a critical thickness typically < 50nm. Recently it has been found in-plane relaxed single crystal PZT-based thin films, i.e. PMnN-PZT(48/52) thin films, thickness above the critical thickness (typically 1μm), exhibited enhanced Tc The Tc is extraordinary high, Tc = 600°C. Their ferroelectric performances are beyond bulk PZT. The high Tc phenomena are demonstrated and the possible mechanisms of the high Tc behavior are discussed.",

keywords = "PMnN-PZT thin films, high Curie temperature, high piezoelectric coupling, sputtered heteroepitaxial thin films",

author = "K. Wasa and T. Matsushima and H. Adachi and T. Matsunaga and T. Yanagitani and T. Yamamoto",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Joint IEEE International Symposium on the Applications of Ferroelectric, International Workshop on Acoustic Transduction Materials and Devices and Workshop on Piezoresponse Force Microscopy, ISAF/IWATMD/PFM 2014 ; Conference date: 12-05-2014 Through 16-05-2014",

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N2 - Ferroelectric thin films with high Curie temperature Tc and high piezoelectric coupling factor k are fascinated for a better piezoelectric MEMS. Pb(Zr, Ti)O3 (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, but the Tc is not high, i.e. Tc <400°C. PZT-based piezoelectric thin films with higher Tc will be much useful. Based on a strain engineering, it is commonly understood the in-plane biaxial strain enhances the Tc of PZT thin films in a laminated composite structure. However, thickness of the PZT thin films is limited below a critical thickness typically < 50nm. Recently it has been found in-plane relaxed single crystal PZT-based thin films, i.e. PMnN-PZT(48/52) thin films, thickness above the critical thickness (typically 1μm), exhibited enhanced Tc The Tc is extraordinary high, Tc = 600°C. Their ferroelectric performances are beyond bulk PZT. The high Tc phenomena are demonstrated and the possible mechanisms of the high Tc behavior are discussed.

AB - Ferroelectric thin films with high Curie temperature Tc and high piezoelectric coupling factor k are fascinated for a better piezoelectric MEMS. Pb(Zr, Ti)O3 (PZT)-based ferroelectric ceramics exhibit high piezoelectricity, but the Tc is not high, i.e. Tc <400°C. PZT-based piezoelectric thin films with higher Tc will be much useful. Based on a strain engineering, it is commonly understood the in-plane biaxial strain enhances the Tc of PZT thin films in a laminated composite structure. However, thickness of the PZT thin films is limited below a critical thickness typically < 50nm. Recently it has been found in-plane relaxed single crystal PZT-based thin films, i.e. PMnN-PZT(48/52) thin films, thickness above the critical thickness (typically 1μm), exhibited enhanced Tc The Tc is extraordinary high, Tc = 600°C. Their ferroelectric performances are beyond bulk PZT. The high Tc phenomena are demonstrated and the possible mechanisms of the high Tc behavior are discussed.

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