TY - GEN
T1 - Highly bendable transparent electrode using mesh patterned indium tin oxide for flexible electronic devices
AU - Sakamoto, Kosuke
AU - Kuwae, Hiroyuki
AU - Kobayashi, Naofumi
AU - Nobori, Atsuki
AU - Shoji, Shuichi
AU - Mizuno, Jun
N1 - Funding Information:
The authors gratefully acknowledge Nissan Chemical Industries, Ltd. for supplying the liquid organic semiconductor. This work is partly supported by Japan Ministry of Education, Culture, Sport Science & Technology (MEXT) Grant-in-Aid for Scientific Basic Research (A) No. 16H02349. The authors thank for MEXT Nanotechnology Platform Support Project of Waseda University.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/25
Y1 - 2017/8/25
N2 - We developed a highly bendable transparent indium tin oxide (ITO) electrode with mesh pattern for flexible electronic devices. Mesh pattern reduces an effect of tensile stress and propagation of cracks when the electrode is bent. The proposed ITO electrode was fabricated on a polyethylene terephthalate by means of photolithography and wet etching. The bendability was investigated through cyclic bending test. Resistance increase rate of the mesh patterned ITO electrode after 1000 times bending was approximately 9.18 × 102 times as low as that on a plane ITO electrode. In addition, the distinct cracks were not observed on the mesh patterned ITO electrode after cyclic bending. Mesh patterned ITO electrode was applied to a liquid-based organic light-emitting diode (OLED). Even the use of the mesh patterned ITO after 100 times bending, electroluminescence emission was confirmed without obvious damages. These results indicate that the mesh patterned ITO electrode gives an impact in flexible electronic devices.
AB - We developed a highly bendable transparent indium tin oxide (ITO) electrode with mesh pattern for flexible electronic devices. Mesh pattern reduces an effect of tensile stress and propagation of cracks when the electrode is bent. The proposed ITO electrode was fabricated on a polyethylene terephthalate by means of photolithography and wet etching. The bendability was investigated through cyclic bending test. Resistance increase rate of the mesh patterned ITO electrode after 1000 times bending was approximately 9.18 × 102 times as low as that on a plane ITO electrode. In addition, the distinct cracks were not observed on the mesh patterned ITO electrode after cyclic bending. Mesh patterned ITO electrode was applied to a liquid-based organic light-emitting diode (OLED). Even the use of the mesh patterned ITO after 100 times bending, electroluminescence emission was confirmed without obvious damages. These results indicate that the mesh patterned ITO electrode gives an impact in flexible electronic devices.
KW - Flexible electronic device
KW - Flexible transparent conductive electrode
KW - Indium Tin Oxide
KW - Liquid-based organic light-emitting diode
KW - Mesh patterned electrode
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U2 - 10.1109/NEMS.2017.8017034
DO - 10.1109/NEMS.2017.8017034
M3 - Conference contribution
AN - SCOPUS:85030836268
T3 - 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
SP - 323
EP - 326
BT - 2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017
Y2 - 9 April 2017 through 12 April 2017
ER -