TY - JOUR
T1 - Highly reliable 0.15 μm MOSFETs with surface proximity gettering (SPG) and nitrided oxide spacer using nitrogen implantation
AU - Kuroi, T.
AU - Shimizu, S.
AU - Furukawa, A.
AU - Komori, S.
AU - Kawasaki, Y.
AU - Kusunoki, S.
AU - Okumura, Y.
AU - Inuishi, M.
AU - Tsubouchi, N.
AU - Horie, K.
PY - 1995
Y1 - 1995
N2 - An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.
AB - An advanced nitrogen implantation technique is proposed. New technique can remarkably suppress the hot carrier degradation. Since the generation of interface states can be reduced by the incorporation of nitrogen at the interface between a substrate and SiO2 spacers. Moreover, the ultra shallow junction without the increase in leakage current can be formed by nitrogen implantation into the source/drain. Since the secondary defects induced by nitrogen implantation can act as a surface proximity gettering (SPG) site.
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M3 - Conference article
AN - SCOPUS:0029515646
SN - 0743-1562
SP - 19
EP - 20
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - Proceedings of the 1995 Symposium on VLSI Technology
Y2 - 6 June 1995 through 8 June 1995
ER -