Abstract
We have developed high power and highly reliable single-mode 980 nm laser diodes (LDs) as an excitation light source for erbium doped fiber amplifiers (EDFAs) for practical communication usage. We designed buried-stripe type 980 nm LDs with a weakly index guided structure to maintain a stable single transverse mode even in high power output operation. Regarding the typical initial device characteristics, a kink level of 315±15 mW was realized and the devices showed maximum light output powers of over 550 mW at 25 °C and complete thermal rollover characteristics measured at temperatures up to 150 °C with 800 mA current injection. In electrostatic discharge (ESD) tests, no significant change of light output and/or voltage versus current characteristics after forward bias discharges typically up to about +12 kV and reverse up to -30 kV (equipment limitation) was found. Regarding the reliability, we carried out long-term aging tests at 120 mW light output power at 50 °C. In the tests, we confirmed no sudden failure and very stable spectral characteristics. In addition, we obtained similar degradation rates over different device groups. Furthermore, 150-250 mW light output aging tests also showed stable operation. The characteristics of these devices make them suitable for practical communication applications.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 280-292 |
Number of pages | 13 |
Volume | 3945 |
Publication status | Published - 2000 |
Externally published | Yes |
Event | Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging and Reliability of Semiconductor Laseer V - San Jsoe, CA, USA Duration: 2000 Jan 25 → 2000 Jan 26 |
Other
Other | Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging and Reliability of Semiconductor Laseer V |
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City | San Jsoe, CA, USA |
Period | 00/1/25 → 00/1/26 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics