TY - JOUR
T1 - Highly scalable FBC (floating body cell) with 25nm BOX structure for embedded DRAM applications
AU - Shino, Tomoaki
AU - Higashi, Tomoki
AU - Fujita, Katsuyuki
AU - Ohsawa, Takashi
AU - Minami, Yoshihiro
AU - Yamada, Takashi
AU - Morikado, Mutsuo
AU - Nakajima, Hiroomi
AU - Inoh, Kazumi
AU - Hamamoto, Takeshi
AU - Nitayama, Akihiro
PY - 2004
Y1 - 2004
N2 - A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.
AB - A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.
UR - http://www.scopus.com/inward/record.url?scp=4544260160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4544260160&partnerID=8YFLogxK
U2 - 10.1109/vlsit.2004.1345435
DO - 10.1109/vlsit.2004.1345435
M3 - Conference article
AN - SCOPUS:4544260160
SN - 0743-1562
SP - 132
EP - 133
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
T2 - 2004 Symposium on VLSI Technology - Digest of Technical Papers
Y2 - 15 June 2004 through 17 June 2004
ER -