Highly scalable FBC (floating body cell) with 25nm BOX structure for embedded DRAM applications

Tomoaki Shino*, Tomoki Higashi, Katsuyuki Fujita, Takashi Ohsawa, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)


A novel FBC with 25nm-thick BOX (buried oxide) structure has been developed. A feature of new FBC is scalability in the case of thinner SOI, which promises embedded DRAM on SOI in future generations. Using 96Kbit array, the pause time distribution of FBC is demonstrated for the first time. Due to simplified structure, pause time variation of new FBC is significantly suppressed compared with conventional FBC.

Original languageEnglish
Pages (from-to)132-133
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2004
Externally publishedYes
Event2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 152004 Jun 17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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