Highly stacked quantum dot lasers fabricated by a strain-compensation technique

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/PHO.2011.6110476

Highly stacked quantum dot lasers fabricated by a strain-compensation technique

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.

Original language	English
Title of host publication	IEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages	163-164
Number of pages	2
DOIs	https://doi.org/10.1109/PHO.2011.6110476
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States Duration: 2011 Oct 9 → 2011 Oct 13

Publication series

Name	IEEE Photonic Society 24th Annual Meeting, PHO 2011

Other

Other	24th Annual Meeting on IEEE Photonic Society, PHO 2011
Country/Territory	United States
City	Arlington, VA
Period	11/10/9 → 11/10/13

Keywords

molecular beam epitaxy
quantum dot
semiconductor laser
strain compensation

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1109/PHO.2011.6110476

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Akahane, K, Yamamoto, N & Kawanishi, T 2011, Highly stacked quantum dot lasers fabricated by a strain-compensation technique. in IEEE Photonic Society 24th Annual Meeting, PHO 2011., 6110476, IEEE Photonic Society 24th Annual Meeting, PHO 2011, pp. 163-164, 24th Annual Meeting on IEEE Photonic Society, PHO 2011, Arlington, VA, United States, 11/10/9. https://doi.org/10.1109/PHO.2011.6110476

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title = "Highly stacked quantum dot lasers fabricated by a strain-compensation technique",

abstract = "We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.",

keywords = "molecular beam epitaxy, quantum dot, semiconductor laser, strain compensation",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2011",

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day = "1",

doi = "10.1109/PHO.2011.6110476",

language = "English",

isbn = "9781424489404",

series = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",

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note = "24th Annual Meeting on IEEE Photonic Society, PHO 2011 ; Conference date: 09-10-2011 Through 13-10-2011",

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TY - GEN

T1 - Highly stacked quantum dot lasers fabricated by a strain-compensation technique

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.

AB - We fabricated laser diodes containing highly stacked InAs quantum dots using a strain-compensation technique. The quantum dots exhibited laser emissions from 1.47 to 1.7 μm and a high characteristic temperature of 113 K.

KW - molecular beam epitaxy

KW - quantum dot

KW - semiconductor laser

KW - strain compensation

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U2 - 10.1109/PHO.2011.6110476

DO - 10.1109/PHO.2011.6110476

M3 - Conference contribution

AN - SCOPUS:84855993939

SN - 9781424489404

T3 - IEEE Photonic Society 24th Annual Meeting, PHO 2011

SP - 163

EP - 164

BT - IEEE Photonic Society 24th Annual Meeting, PHO 2011

T2 - 24th Annual Meeting on IEEE Photonic Society, PHO 2011

Y2 - 9 October 2011 through 13 October 2011

ER -

Highly stacked quantum dot lasers fabricated by a strain-compensation technique

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

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