TY - JOUR
T1 - Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface
AU - Makimoto, Toshiki
AU - Brar, Berinder
AU - Kroemer, Herbert
PY - 1995
Y1 - 1995
N2 - We demonstrate hole accumulation in unintentionally doped (In)GaSb/AlSb quantum wells, using an InAs surface as a cap layer. From the hole concentrations in quantum wells, the energy difference between the conduction band edge of InAs and the valence band edge of GaSb is estimated. Relatively high two-dimensional hole mobilities of 650 and 7000 cm2/V · s are obtained from Hall measurements at 300 and 77 K. For a strained InGaSb/AlSb quantum well, mobility enhancement is observed.
AB - We demonstrate hole accumulation in unintentionally doped (In)GaSb/AlSb quantum wells, using an InAs surface as a cap layer. From the hole concentrations in quantum wells, the energy difference between the conduction band edge of InAs and the valence band edge of GaSb is estimated. Relatively high two-dimensional hole mobilities of 650 and 7000 cm2/V · s are obtained from Hall measurements at 300 and 77 K. For a strained InGaSb/AlSb quantum well, mobility enhancement is observed.
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U2 - 10.1016/0022-0248(95)80066-L
DO - 10.1016/0022-0248(95)80066-L
M3 - Article
AN - SCOPUS:0029306021
SN - 0022-0248
VL - 150
SP - 883
EP - 886
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -