Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

M. Kobayashi*, K. Wakao, S. Nakamura, A. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.

Original languageEnglish
Pages (from-to)474-476
Number of pages3
JournalJournal of Crystal Growth
Publication statusPublished - 1999 May
Externally publishedYes
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sept 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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