TY - JOUR
T1 - Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface
AU - Kobayashi, M.
AU - Wakao, K.
AU - Nakamura, S.
AU - Jia, A.
AU - Yoshikawa, A.
AU - Shimotomai, M.
AU - Kato, Y.
AU - Takahashi, K.
N1 - Funding Information:
This work was supported in part by JSPS Research for the Future Program (JSPS-RTFT96R16201), and in part by the Ministry of Education, Science, Sports and Culture, Grant-in-Aid for Encouragement of Young Scientists, 0975006, 1997.
PY - 1999/5
Y1 - 1999/5
N2 - ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.
AB - ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C-V measurement showed that a good electrical interface was formed.
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U2 - 10.1016/S0022-0248(98)01379-7
DO - 10.1016/S0022-0248(98)01379-7
M3 - Conference article
AN - SCOPUS:0032683568
SN - 0022-0248
VL - 201
SP - 474
EP - 476
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -