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Dive into the research topics of 'Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs'. Together they form a unique fingerprint.- Sort by
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S. Kusunoki, Masahide Inuishi, T. Yamaguchi, K. Tsukamoto, Y. Akasaka
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution