TY - GEN
T1 - Hybrid bonding of Cu/Sn microbump and adhesive with silica filler for 3D interconnection of single micron pitch
AU - Ohyama, Masaki
AU - Nimura, Masatsugu
AU - Mizuno, Jun
AU - Shoji, Shuichi
AU - Tamura, Mamoru
AU - Enomoto, Tomoyuki
AU - Shigetou, Akitsu
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/15
Y1 - 2015/7/15
N2 - This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N2 atmospheric pressure after surface treatment of Ar/H2 plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.
AB - This paper describes hybrid bonding technology of Cu/Sn microbumps and adhesive with silica filler for three-dimensional (3D) interconnection of single-micron pitch. We fabricated bonding structure composed of 8-μm pitch Cu/Sn bumps and uncured adhesive with by using combination process of resin-chemical mechanical polishing (CMP) and O2/CHF3 plasma etching. Adhesive with silica filler is conventionally used for reduction of mechanical stress around microbumps by lowering CTE of underfill. With the bonding structure, the Cu/Sn microbumps and the adhesive were simultaneously bonded in N2 atmospheric pressure after surface treatment of Ar/H2 plasma irradiation. Results of scanning electron microscope (SEM) and scanning ion microscope (SIM) analyses show that Sn of microbumps was properly wetted on Cu film without resin and silica filler trapping. The adhesive was also bonded on Cu film in 6-μm gap between chips. The shear strength was 17.85 MPa. Therefore, proposed method is highly effective for hybrid bonding of single-micron pitch aimed at future ultra-high density 3D interconnection.
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U2 - 10.1109/ECTC.2015.7159612
DO - 10.1109/ECTC.2015.7159612
M3 - Conference contribution
AN - SCOPUS:84942123115
T3 - Proceedings - Electronic Components and Technology Conference
SP - 325
EP - 330
BT - 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Y2 - 26 May 2015 through 29 May 2015
ER -