HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Y. Kushiro; Y. Noda; Yuichi Matsushima; S. Akiba

HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Y. Kushiro^*, Y. Noda, Yuichi Matsushima, S. Akiba

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

Original language	English
Title of host publication	Institute of Physics Conference Series
Editors	B. de Cremoux
Pages	157-162
Number of pages	6
Edition	74
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{af5a8607656043d18f2f91d31e7d804e,

title = "HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.",

abstract = "Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.",

author = "Y. Kushiro and Y. Noda and Yuichi Matsushima and S. Akiba",

year = "1985",

language = "English",

isbn = "0854981659",

pages = "157--162",

editor = "{de Cremoux}, B.",

booktitle = "Institute of Physics Conference Series",

edition = "74",

}

TY - GEN

T1 - HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

AU - Kushiro, Y.

AU - Noda, Y.

AU - Matsushima, Yuichi

AU - Akiba, S.

PY - 1985

Y1 - 1985

N2 - Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

AB - Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0022184285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022184285&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022184285

SN - 0854981659

SP - 157

EP - 162

BT - Institute of Physics Conference Series

A2 - de Cremoux, B.

ER -

HYDRIDE VPE GROWTH FOR HIGH-SENSITIVE InGaAs/InGaAsP/InP HETEROSTRUCTURE APDs AND 1. 4-1. 5 mu m InGaAs/InP MQW LDs.

Abstract

ASJC Scopus subject areas

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