Hydride VPE growth of InP-based alloys for optoelectronic devices is reported. The growth system consists of a double-chamber reactor, an isolated waiting chamber and a magnetic sample-loader. The reduction of impurities and defects in the growth layer has been realized with this apparatus. The VPE-grown InGaAs/InGaAsP/InP heterostructure APD has shown the receiver sensitivity higher than that of a Ge APD by 2-7 db. InGaAs/InP MQW-lasers were also prepared and room-temperature pulsed operation has been achieved.
|Title of host publication||Institute of Physics Conference Series|
|Editors||B. de Cremoux|
|Number of pages||6|
|Publication status||Published - 1985|
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