III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

Takuma Aihara; Takuro Fujii; Hiroshi Fukuda; Tatsurou Hiraki; Takaaki Kakitsuka; Shinji Matsuo; Koji Takeda; Tai Tsuchizawa

doi:10.1109/GROUP4.2019.8853874

III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

Takuma Aihara, Takuro Fujii, Hiroshi Fukuda, Tatsurou Hiraki, Takaaki Kakitsuka, Shinji Matsuo, Koji Takeda, Tai Tsuchizawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L band at 25-80 degrees Celsius.

Original language	English
Title of host publication	GFP 2019 - Group IV Photonics
Publisher	IEEE Computer Society
ISBN (Electronic)	9781728109053
DOIs	https://doi.org/10.1109/GROUP4.2019.8853874
Publication status	Published - 2019 Aug
Externally published	Yes
Event	16th IEEE International Conference on Group IV Photonics, GFP 2019 - Singapore, Singapore Duration: 2019 Aug 28 → 2019 Aug 30

Publication series

Name	IEEE International Conference on Group IV Photonics GFP
Volume	2019-August
ISSN (Print)	1949-2081

Conference

Conference	16th IEEE International Conference on Group IV Photonics, GFP 2019
Country/Territory	Singapore
City	Singapore
Period	19/8/28 → 19/8/30

Keywords

Optical modulator
Silicon photonics

ASJC Scopus subject areas

Electrical and Electronic Engineering
Ceramics and Composites
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/GROUP4.2019.8853874

Cite this

Aihara, T., Fujii, T., Fukuda, H., Hiraki, T., Kakitsuka, T., Matsuo, S., Takeda, K., & Tsuchizawa, T. (2019). III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity. In GFP 2019 - Group IV Photonics Article 8853874 (IEEE International Conference on Group IV Photonics GFP; Vol. 2019-August). IEEE Computer Society. https://doi.org/10.1109/GROUP4.2019.8853874

Aihara, T, Fujii, T, Fukuda, H, Hiraki, T, Kakitsuka, T, Matsuo, S, Takeda, K & Tsuchizawa, T 2019, III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity. in GFP 2019 - Group IV Photonics., 8853874, IEEE International Conference on Group IV Photonics GFP, vol. 2019-August, IEEE Computer Society, 16th IEEE International Conference on Group IV Photonics, GFP 2019, Singapore, Singapore, 19/8/28. https://doi.org/10.1109/GROUP4.2019.8853874

@inproceedings{019b0925cc674cf791edf97342ffcc9d,

title = "III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity",

abstract = "We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L band at 25-80 degrees Celsius.",

keywords = "Optical modulator, Silicon photonics",

author = "Takuma Aihara and Takuro Fujii and Hiroshi Fukuda and Tatsurou Hiraki and Takaaki Kakitsuka and Shinji Matsuo and Koji Takeda and Tai Tsuchizawa",

note = "Funding Information: Part of this work was supported by CREST (JPMJCR15N4), JST. Publisher Copyright: {\textcopyright} 2019 IEEE.; 16th IEEE International Conference on Group IV Photonics, GFP 2019 ; Conference date: 28-08-2019 Through 30-08-2019",

year = "2019",

month = aug,

doi = "10.1109/GROUP4.2019.8853874",

language = "English",

series = "IEEE International Conference on Group IV Photonics GFP",

publisher = "IEEE Computer Society",

booktitle = "GFP 2019 - Group IV Photonics",

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AU - Aihara, Takuma

AU - Fujii, Takuro

AU - Fukuda, Hiroshi

AU - Hiraki, Tatsurou

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

AU - Takeda, Koji

AU - Tsuchizawa, Tai

PY - 2019/8

Y1 - 2019/8

N2 - We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L band at 25-80 degrees Celsius.

AB - We demonstrate an ultra-high efficiency III-V/Si metal-oxide-semiconductor capacitor Mach-Zehnder modulator with low temperature sensitivity. The measured modulation efficiencies of the fabricated device are 0.08-0.11 Vcm in the C and L band at 25-80 degrees Celsius.

KW - Optical modulator

KW - Silicon photonics

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U2 - 10.1109/GROUP4.2019.8853874

DO - 10.1109/GROUP4.2019.8853874

M3 - Conference contribution

AN - SCOPUS:85073419719

T3 - IEEE International Conference on Group IV Photonics GFP

BT - GFP 2019 - Group IV Photonics

PB - IEEE Computer Society

T2 - 16th IEEE International Conference on Group IV Photonics, GFP 2019

Y2 - 28 August 2019 through 30 August 2019

ER -

III-V/Si MOS Capacitor Mach-Zehnder Modulator with Low Temperature Sensitivity

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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