Image formation by dynamic exposure with multispot beam in X-ray nanolithography

Eijiro Toyota*, Masakazu Washio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.

Original languageEnglish
Pages (from-to)4404-4409
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - 2002 Jun


  • Dynamic exposure
  • Enlarged pattern mask
  • Focusing X-ray mask
  • Interference slit mask
  • X-ray lithography
  • X-ray mask

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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