Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application

Yuuichi Hirano; Takashi Ipposhi; Hai Dang; Takuji Matsumoto; Toshiaki Iwamatsu; Kouji Nii; Yasumasa Tsukamoto; Tomoaki Yoshizawa; Hisayuki Kato; Shigeto Maegawa; Kazutami Arimoto; Yasuo Inoue; Masahide Inuishi; Yuzuru Ohji

Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application

Yuuichi Hirano^*, Takashi Ipposhi, Hai Dang, Takuji Matsumoto, Toshiaki Iwamatsu, Kouji Nii, Yasumasa Tsukamoto, Tomoaki Yoshizawa, Hisayuki Kato, Shigeto Maegawa, Kazutami Arimoto, Yasuo Inoue, Masahide Inuishi, Yuzuru Ohji

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.

Original language	English
Pages (from-to)	35-38
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Hirano, Y., Ipposhi, T., Dang, H., Matsumoto, T., Iwamatsu, T., Nii, K., Tsukamoto, Y., Yoshizawa, T., Kato, H., Maegawa, S., Arimoto, K., Inoue, Y., Inuishi, M., & Ohji, Y. (2003). Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application. Technical Digest - International Electron Devices Meeting, 35-38.

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title = "Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application",

abstract = "Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.",

author = "Yuuichi Hirano and Takashi Ipposhi and Hai Dang and Takuji Matsumoto and Toshiaki Iwamatsu and Kouji Nii and Yasumasa Tsukamoto and Tomoaki Yoshizawa and Hisayuki Kato and Shigeto Maegawa and Kazutami Arimoto and Yasuo Inoue and Masahide Inuishi and Yuzuru Ohji",

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AU - Hirano, Yuuichi

AU - Ipposhi, Takashi

AU - Dang, Hai

AU - Matsumoto, Takuji

AU - Iwamatsu, Toshiaki

AU - Nii, Kouji

AU - Tsukamoto, Yasumasa

AU - Yoshizawa, Tomoaki

AU - Kato, Hisayuki

AU - Maegawa, Shigeto

AU - Arimoto, Kazutami

AU - Inoue, Yasuo

AU - Inuishi, Masahide

AU - Ohji, Yuzuru

PY - 2003

Y1 - 2003

N2 - Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.

AB - Actively Body-bias Controlled (ABC) SOI SRAM that has a new cell structure including connections of the access and the driver transistor's bodies to the word line is proposed to realize low-voltage operation. We developed the direct body contact technology to apply forward biases to the bodies without area penalties and increases of parasitic gate capacitances by using the hybrid trench isolation [1] for the first time. Moreover, the standby current does not change because the body bias is not applied when the word-line voltage is low level. It is successfully demonstrated that low-voltage and high-speed operation is achieved by using the ABC SOI SRAM.

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AN - SCOPUS:0842266678

SN - 0163-1918

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Impact of Actively Body-bias Controlled (ABC) SOI SRAM by using Direct Body Contact Technology for Low-Voltage Application

Abstract

ASJC Scopus subject areas

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