TY - GEN
T1 - Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance
AU - Minari, Hideki
AU - Zushi, Tomofumi
AU - Watanabe, Takanobu
AU - Kamakura, Yoshinari
AU - Uno, Shigeyasu
AU - Mori, Nobuya
PY - 2011/9/16
Y1 - 2011/9/16
N2 - Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs.
AB - Theoretical investigations are presented for the effects of atomic disorder, which is always present in Si/SiO2 interface, on the device performance for the first time. We show that the drain current is significantly reduced by a factor of 2 due to random configuration of Si atoms near the Si/SiO2 interfaces in a nanowire with 2.7 nm width. NFET is more easily affected by the disorder because of localized states near the conduction-band bottom. Suppression of the atomic disorder is a key to obtain good performance of nanowire FETs.
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M3 - Conference contribution
AN - SCOPUS:80052670798
SN - 9784863481640
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 122
EP - 123
BT - 2011 Symposium on VLSI Technology, VLSIT 2011 - Digest of Technical Papers
T2 - 2011 Symposium on VLSI Technology, VLSIT 2011
Y2 - 14 June 2011 through 16 June 2011
ER -