Impact of strain on free-exciton resonance energies in wurtzite AlN

Hirokatsu Ikeda; Takahiro Okamura; Kodai Matsukawa; Takayuki Sota; Mariko Sugawara; Takuya Hoshi; Pablo Cantu; Rajat Sharma; John F. Kaeding; Stacia Keller; Umesh K. Mishra; Kei Kosaka; Keiichiro Asai; Shigeaki Sumiya; Tomohiko Shibata; Mitsuhiro Tanaka; James S. Speck; Steven P. DenBaars; Shuji Nakamura; Takahiro Koyama; Takeyoshi Onuma; Shigefusa F. Chichibu

doi:10.1063/1.2825577

Impact of strain on free-exciton resonance energies in wurtzite AlN

Hirokatsu Ikeda^*, Takahiro Okamura, Kodai Matsukawa, Takayuki Sota, Mariko Sugawara, Takuya Hoshi, Pablo Cantu, Rajat Sharma, John F. Kaeding, Stacia Keller, Umesh K. Mishra, Kei Kosaka, Keiichiro Asai, Shigeaki Sumiya, Tomohiko Shibata, Mitsuhiro Tanaka, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Takahiro KoyamaTakeyoshi Onuma, Shigefusa F. Chichibu

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: Eg =6.095 eV at T=11 K, =7.87, ⊥ =7.33, and =8.45, respectively. A brief discussion of the valence band ordering in bulk Alx Ga1-x N is also presented.

Original language	English
Article number	123707
Journal	Journal of Applied Physics
Volume	102
Issue number	12
DOIs	https://doi.org/10.1063/1.2825577
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy(all)

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Ikeda, H., Okamura, T., Matsukawa, K., Sota, T., Sugawara, M., Hoshi, T., Cantu, P., Sharma, R., Kaeding, J. F., Keller, S., Mishra, U. K., Kosaka, K., Asai, K., Sumiya, S., Shibata, T., Tanaka, M., Speck, J. S., DenBaars, S. P., Nakamura, S., ... Chichibu, S. F. (2007). Impact of strain on free-exciton resonance energies in wurtzite AlN. Journal of Applied Physics, 102(12), Article 123707. https://doi.org/10.1063/1.2825577

Ikeda, H, Okamura, T, Matsukawa, K, Sota, T, Sugawara, M, Hoshi, T, Cantu, P, Sharma, R, Kaeding, JF, Keller, S, Mishra, UK, Kosaka, K, Asai, K, Sumiya, S, Shibata, T, Tanaka, M, Speck, JS, DenBaars, SP, Nakamura, S, Koyama, T, Onuma, T & Chichibu, SF 2007, 'Impact of strain on free-exciton resonance energies in wurtzite AlN', Journal of Applied Physics, vol. 102, no. 12, 123707. https://doi.org/10.1063/1.2825577

@article{13d62233db2148fa8c0d0ad5e2943cce,

title = "Impact of strain on free-exciton resonance energies in wurtzite AlN",

abstract = "The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: Eg =6.095 eV at T=11 K, =7.87, ⊥ =7.33, and =8.45, respectively. A brief discussion of the valence band ordering in bulk Alx Ga1-x N is also presented.",

author = "Hirokatsu Ikeda and Takahiro Okamura and Kodai Matsukawa and Takayuki Sota and Mariko Sugawara and Takuya Hoshi and Pablo Cantu and Rajat Sharma and Kaeding, {John F.} and Stacia Keller and Mishra, {Umesh K.} and Kei Kosaka and Keiichiro Asai and Shigeaki Sumiya and Tomohiko Shibata and Mitsuhiro Tanaka and Speck, {James S.} and DenBaars, {Steven P.} and Shuji Nakamura and Takahiro Koyama and Takeyoshi Onuma and Chichibu, {Shigefusa F.}",

note = "Funding Information: This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan by a Grant-in-Aid for Scientific Research in Priority Areas, No. 18069001.",

year = "2007",

doi = "10.1063/1.2825577",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

TY - JOUR

T1 - Impact of strain on free-exciton resonance energies in wurtzite AlN

AU - Ikeda, Hirokatsu

AU - Okamura, Takahiro

AU - Matsukawa, Kodai

AU - Sota, Takayuki

AU - Sugawara, Mariko

AU - Hoshi, Takuya

AU - Cantu, Pablo

AU - Sharma, Rajat

AU - Kaeding, John F.

AU - Keller, Stacia

AU - Mishra, Umesh K.

AU - Kosaka, Kei

AU - Asai, Keiichiro

AU - Sumiya, Shigeaki

AU - Shibata, Tomohiko

AU - Tanaka, Mitsuhiro

AU - Speck, James S.

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

AU - Koyama, Takahiro

AU - Onuma, Takeyoshi

AU - Chichibu, Shigefusa F.

N1 - Funding Information: This work was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan by a Grant-in-Aid for Scientific Research in Priority Areas, No. 18069001.

PY - 2007

Y1 - 2007

N2 - The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: Eg =6.095 eV at T=11 K, =7.87, ⊥ =7.33, and =8.45, respectively. A brief discussion of the valence band ordering in bulk Alx Ga1-x N is also presented.

AB - The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: Eg =6.095 eV at T=11 K, =7.87, ⊥ =7.33, and =8.45, respectively. A brief discussion of the valence band ordering in bulk Alx Ga1-x N is also presented.

UR - http://www.scopus.com/inward/record.url?scp=37549071523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549071523&partnerID=8YFLogxK

U2 - 10.1063/1.2825577

DO - 10.1063/1.2825577

M3 - Article

AN - SCOPUS:37549071523

SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

M1 - 123707

ER -

Impact of strain on free-exciton resonance energies in wurtzite AlN

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