Impact of strain on free-exciton resonance energies in wurtzite AlN

Hirokatsu Ikeda*, Takahiro Okamura, Kodai Matsukawa, Takayuki Sota, Mariko Sugawara, Takuya Hoshi, Pablo Cantu, Rajat Sharma, John F. Kaeding, Stacia Keller, Umesh K. Mishra, Kei Kosaka, Keiichiro Asai, Shigeaki Sumiya, Tomohiko Shibata, Mitsuhiro Tanaka, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Takahiro KoyamaTakeyoshi Onuma, Shigefusa F. Chichibu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)


The strain dependence of the free-exciton resonance energies in AlN epilayers is presented and the values are analyzed using an appropriate Hamiltonian assuming equibiaxial stress for the wurtzite crystal structure in order to obtain valence band parameters. Based on the results, we study the strain dependence of the valence band ordering, optical transition probability, and free-exciton binding energy. As a result of these calculations, the following strain-free values are obtained for the energy gap, averaged dielectric constants, and ordinary and extraordinary dielectric constants: Eg =6.095 eV at T=11 K, =7.87, ⊥ =7.33, and =8.45, respectively. A brief discussion of the valence band ordering in bulk Alx Ga1-x N is also presented.

Original languageEnglish
Article number123707
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - 2007

ASJC Scopus subject areas

  • General Physics and Astronomy


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