Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch

Tohru Tsuruoka; Tsuyoshi Hasegawa; Kazuya Terabe; Masakazu Aono

doi:10.1557/opl.2012.901

Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta₂O₅-based atomic switch

Tohru Tsuruoka^*, Tsuyoshi Hasegawa, Kazuya Terabe, Masakazu Aono

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.

Original language	English
Title of host publication	Materials and Physics of Emerging Nonvolatile Memories
Pages	153-158
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.901
Publication status	Published - 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: 2012 Apr 9 → 2012 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1430
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	12/4/9 → 12/4/13

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2012.901

Cite this

Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta₂O₅-based atomic switch. / Tsuruoka, Tohru; Hasegawa, Tsuyoshi; Terabe, Kazuya et al.
Materials and Physics of Emerging Nonvolatile Memories. 2012. p. 153-158 (Materials Research Society Symposium Proceedings; Vol. 1430).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuruoka, T, Hasegawa, T, Terabe, K & Aono, M 2012, Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta₂O₅-based atomic switch. in Materials and Physics of Emerging Nonvolatile Memories. Materials Research Society Symposium Proceedings, vol. 1430, pp. 153-158, 2012 MRS Spring Meeting, San Francisco, CA, United States, 12/4/9. https://doi.org/10.1557/opl.2012.901

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title = "Impacts of temperature and moisture on the resistive switching characteristics of a Cu-Ta2O5-based atomic switch",

abstract = "The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.",

author = "Tohru Tsuruoka and Tsuyoshi Hasegawa and Kazuya Terabe and Masakazu Aono",

note = "Funding Information: We would like to thank Prof. R. Waser and Dr. I. Valov at RTWH-Aachen University for fruitful discussions. This work was supported in part by the Strategic Japanese-German Cooperative Program, JST. T.T also acknowledges the financial support of the Iketani Science and Technology Foundation.; 2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

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AU - Aono, Masakazu

N1 - Funding Information: We would like to thank Prof. R. Waser and Dr. I. Valov at RTWH-Aachen University for fruitful discussions. This work was supported in part by the Strategic Japanese-German Cooperative Program, JST. T.T also acknowledges the financial support of the Iketani Science and Technology Foundation.

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AB - The effects of temperature and moisture on the resistive switching characteristics of oxide-based atomic switches were investigated to reveal their switching mechanism. The observed temperature variations of the SET voltages can be qualitatively explained by the classical nucleation theory. The moisture absorption in oxides results in the formation of a hydrogen-bond network at grain boundaries, and metal ions are likely to migrate along the grain boundaries. Depending on the strength of hydrogen bonds in oxides, the atomic switches exhibit a different switching behavior to ambient conditions.

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