Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Hong Hsin Lai; Chao Chih Hsiao; Chin Wei Kuo; Yi Jen Chan; Takuro Sato

Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Hong Hsin Lai^*, Chao Chih Hsiao, Chin Wei Kuo, Yi Jen Chan, Takuro Sato

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM₃ enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

Original language	English
Pages (from-to)	76-80
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E87-C
Issue number	1
Publication status	Published - 2004 Jan
Externally published	Yes

Keywords

CMOS
Linearity improvement
Microwave large-signal model

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{7b4f704a8cbe4d35b1ef2cd994ece2fb,

title = "Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model",

abstract = "A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.",

keywords = "CMOS, Linearity improvement, Microwave large-signal model",

author = "Lai, {Hong Hsin} and Hsiao, {Chao Chih} and Kuo, {Chin Wei} and Chan, {Yi Jen} and Takuro Sato",

year = "2004",

month = jan,

language = "English",

volume = "E87-C",

pages = "76--80",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "1",

}

TY - JOUR

T1 - Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

AU - Lai, Hong Hsin

AU - Hsiao, Chao Chih

AU - Kuo, Chin Wei

AU - Chan, Yi Jen

AU - Sato, Takuro

PY - 2004/1

Y1 - 2004/1

N2 - A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

AB - A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

KW - CMOS

KW - Linearity improvement

KW - Microwave large-signal model

UR - http://www.scopus.com/inward/record.url?scp=0842331830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0842331830&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0842331830

SN - 0916-8524

VL - E87-C

SP - 76

EP - 80

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 1

ER -

Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this