Improved CMOS Microwave Linearity Based on the Modified Large-Signal BSIM Model

Hong Hsin Lai*, Chao Chih Hsiao, Chin Wei Kuo, Yi Jen Chan, Takuro Sato

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A modified 0.35 μm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

Original languageEnglish
Pages (from-to)76-80
Number of pages5
JournalIEICE Transactions on Electronics
Issue number1
Publication statusPublished - 2004 Jan
Externally publishedYes


  • CMOS
  • Linearity improvement
  • Microwave large-signal model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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