TY - GEN
T1 - In-plane quantum energy control of InGaAs/InGaAsP MQW structure by mocvd selective area growth
AU - Takahashi, M.
AU - Suzuki, M.
AU - Aoki, M.
AU - Uomi, K.
AU - Kawano, T.
PY - 1992/1/1
Y1 - 1992/1/1
N2 - In-plane bandgap energy (Eg) control by selective area growth (SAG) has become a very attractive technique for achieving the monolithic integration of semiconductor optical devices. Recently, Eg control over a wide range has been demonstrated by applying SAG, especially to multiple-quantum well (MQW) structures in InGaAs/InP (l)-(2), and to GaAs/AlGaAs (3) material systems. For the InGaAs/InP system, SAG has already been applied to integrated devices, although research is still in the early stages, for light wave communication (l)-(2). However, the exact mechanism of the Eg variation has not yet been clarified. In this letter, the controllability of in-plane Eg is fully investigated focusing on the mechanism of quantum energy variation for InGaAs/InGaAsP MQW structures. Moreover, SAG is applied to an MQW electroabsorption (EA)-modulator/DFB-laser integrated light source. Superior properties of the device indicate that the SAG technique is promising for photonic device integration.
AB - In-plane bandgap energy (Eg) control by selective area growth (SAG) has become a very attractive technique for achieving the monolithic integration of semiconductor optical devices. Recently, Eg control over a wide range has been demonstrated by applying SAG, especially to multiple-quantum well (MQW) structures in InGaAs/InP (l)-(2), and to GaAs/AlGaAs (3) material systems. For the InGaAs/InP system, SAG has already been applied to integrated devices, although research is still in the early stages, for light wave communication (l)-(2). However, the exact mechanism of the Eg variation has not yet been clarified. In this letter, the controllability of in-plane Eg is fully investigated focusing on the mechanism of quantum energy variation for InGaAs/InGaAsP MQW structures. Moreover, SAG is applied to an MQW electroabsorption (EA)-modulator/DFB-laser integrated light source. Superior properties of the device indicate that the SAG technique is promising for photonic device integration.
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U2 - 10.1109/ICIPRM.1992.235603
DO - 10.1109/ICIPRM.1992.235603
M3 - Conference contribution
AN - SCOPUS:85024272461
T3 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
SP - 206
EP - 209
BT - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Y2 - 21 April 1992 through 24 April 1992
ER -