In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films

Naoki Sugita; Eisuke Tokumitsu; Minoru Osada; Masato Kakihana

In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi_4-xLa_xTi₃O₁₂ films

Naoki Sugita^*, Eisuke Tokumitsu, Minoru Osada, Masato Kakihana

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

In situ Raman spectra measurements have been employed to reveal the crystallization process of sol-gel derived Bi_4-xLa_xTi₃O₁₂ (BLT) thin films. The Raman spectra of BLT films with a La composition x of 0.75 were measured with increasing temperature up to 800°C in air and N₂ ambient. It is demonstrated that Bi₂O₂ layered structures form first at 500°C and perovskite structures start to crystallize at 600°C or higher.

Original language	English
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	42
Issue number	8 A
Publication status	Published - 2003 Aug 1
Externally published	Yes

Keywords

Bismuth titanate
Crystallization
Ferroelectrics
Raman spectra
Thin films

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

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title = "In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films",

abstract = "In situ Raman spectra measurements have been employed to reveal the crystallization process of sol-gel derived Bi4-xLaxTi3O12 (BLT) thin films. The Raman spectra of BLT films with a La composition x of 0.75 were measured with increasing temperature up to 800°C in air and N2 ambient. It is demonstrated that Bi2O2 layered structures form first at 500°C and perovskite structures start to crystallize at 600°C or higher.",

keywords = "Bismuth titanate, Crystallization, Ferroelectrics, Raman spectra, Thin films",

author = "Naoki Sugita and Eisuke Tokumitsu and Minoru Osada and Masato Kakihana",

year = "2003",

month = aug,

day = "1",

language = "English",

volume = "42",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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publisher = "Japan Society of Applied Physics",

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T1 - In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi4-xLaxTi3O12 films

AU - Sugita, Naoki

AU - Tokumitsu, Eisuke

AU - Osada, Minoru

AU - Kakihana, Masato

PY - 2003/8/1

Y1 - 2003/8/1

N2 - In situ Raman spectra measurements have been employed to reveal the crystallization process of sol-gel derived Bi4-xLaxTi3O12 (BLT) thin films. The Raman spectra of BLT films with a La composition x of 0.75 were measured with increasing temperature up to 800°C in air and N2 ambient. It is demonstrated that Bi2O2 layered structures form first at 500°C and perovskite structures start to crystallize at 600°C or higher.

AB - In situ Raman spectra measurements have been employed to reveal the crystallization process of sol-gel derived Bi4-xLaxTi3O12 (BLT) thin films. The Raman spectra of BLT films with a La composition x of 0.75 were measured with increasing temperature up to 800°C in air and N2 ambient. It is demonstrated that Bi2O2 layered structures form first at 500°C and perovskite structures start to crystallize at 600°C or higher.

KW - Bismuth titanate

KW - Crystallization

KW - Ferroelectrics

KW - Raman spectra

KW - Thin films

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M3 - Article

AN - SCOPUS:0141792400

SN - 0021-4922

VL - 42

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 8 A

ER -

In situ Raman spectroscopy observation of crystallization process of sol-gel derived Bi_4-xLa_xTi₃O₁₂ films

Abstract

Keywords

ASJC Scopus subject areas

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