In-situ STM observation of GaAs surfaces after nitridation

Toshiki Makimoto*, Makoto Kasu, Jean L. Benchimol, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Scanning tunneling microscopy was used to study surface morphologies for various GaAs surfaces after nitridation using atomic nitrogen. For the (100) surface, 3-nm-wide stripes were observed along the [011] azimuth. Smooth surfaces densely covered with small GaN grains were observed for the (311)A and (111)A surfaces, while large GaN grains with some voids were observed for the (111)B surface. These results suggest that the (n11)A surfaces are promising for the growth of GaN on GaAs. Among the (100), (111)B, and (111)A GaAs surfaces, the (111)A surface after nitridation showed the largest selectivity of GaAs growth in metalorganic molecular beam epitaxy using trimethylgallium and tertiarybutylarsine. The surface roughness of GaAs after nitridation was also found to have a major effect on the selectivity of GaAs growth.

Original languageEnglish
Pages (from-to)1733-1735
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3 SUPPL. B
Publication statusPublished - 1997 Mar
Externally publishedYes


  • (100)
  • (111)A
  • (111)B
  • (311)A
  • Atomic nitrogen
  • GaAs
  • Nitridation
  • STM
  • Selective-area growth

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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