Abstract
Scanning tunneling microscopy was used to study surface morphologies for various GaAs surfaces after nitridation using atomic nitrogen. For the (100) surface, 3-nm-wide stripes were observed along the [011] azimuth. Smooth surfaces densely covered with small GaN grains were observed for the (311)A and (111)A surfaces, while large GaN grains with some voids were observed for the (111)B surface. These results suggest that the (n11)A surfaces are promising for the growth of GaN on GaAs. Among the (100), (111)B, and (111)A GaAs surfaces, the (111)A surface after nitridation showed the largest selectivity of GaAs growth in metalorganic molecular beam epitaxy using trimethylgallium and tertiarybutylarsine. The surface roughness of GaAs after nitridation was also found to have a major effect on the selectivity of GaAs growth.
| Original language | English |
|---|---|
| Pages (from-to) | 1733-1735 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 3 SUPPL. B |
| DOIs | |
| Publication status | Published - 1997 Mar |
| Externally published | Yes |
Keywords
- (100)
- (111)A
- (111)B
- (311)A
- Atomic nitrogen
- GaAs
- MOMBE
- Nitridation
- STM
- Selective-area growth
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)