In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device

Takashi Tsuchiya; Kazuya Terabe; Masanori Ochi; Tohru Higuchi; Minoru Osada; Yoshiyuki Yamashita; Shigenori Ueda; Masakazu Aono

doi:10.1021/acsnano.5b07374

In situ tuning of magnetization and magnetoresistance in fe₃o₄ thin film achieved with all-solid-state redox device

Takashi Tsuchiya^*, Kazuya Terabe, Masanori Ochi, Tohru Higuchi, Minoru Osada, Yoshiyuki Yamashita, Shigenori Ueda, Masakazu Aono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

An all-solid-state redox device composed of Fe₃O₄ thin film and Li⁺ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li⁺ insertion and removal. Tuning of the various Fe₃O₄ thin film properties was achieved by donation of an electron to the Fe³⁺ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

Original language	English
Pages (from-to)	1655-1661
Number of pages	7
Journal	ACS Nano
Volume	10
Issue number	1
DOIs	https://doi.org/10.1021/acsnano.5b07374
Publication status	Published - 2016 Jan 26
Externally published	Yes

Keywords

All-solid-state
Magnetite
Magnetoresistance
Nanoionics
Solid state ionics

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1021/acsnano.5b07374

Cite this

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title = "In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device",

abstract = "An all-solid-state redox device composed of Fe3O4 thin film and Li+ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li+ insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe3+ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.",

keywords = "All-solid-state, Magnetite, Magnetoresistance, Nanoionics, Solid state ionics",

author = "Takashi Tsuchiya and Kazuya Terabe and Masanori Ochi and Tohru Higuchi and Minoru Osada and Yoshiyuki Yamashita and Shigenori Ueda and Masakazu Aono",

year = "2016",

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doi = "10.1021/acsnano.5b07374",

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T1 - In situ tuning of magnetization and magnetoresistance in fe3o4 thin film achieved with all-solid-state redox device

AU - Tsuchiya, Takashi

AU - Terabe, Kazuya

AU - Ochi, Masanori

AU - Higuchi, Tohru

AU - Osada, Minoru

AU - Yamashita, Yoshiyuki

AU - Ueda, Shigenori

AU - Aono, Masakazu

PY - 2016/1/26

Y1 - 2016/1/26

N2 - An all-solid-state redox device composed of Fe3O4 thin film and Li+ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li+ insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe3+ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

AB - An all-solid-state redox device composed of Fe3O4 thin film and Li+ ion conducting solid electrolyte was fabricated for use in tuning magnetization and magnetoresistance (MR), which are key factors in the creation of high-density magnetic storage devices. Electrical conductivity, magnetization, and MR were reversibly tuned by Li+ insertion and removal. Tuning of the various Fe3O4 thin film properties was achieved by donation of an electron to the Fe3+ ions. This technique should lead to the development of spintronics devices based on the reversible switching of magnetization and spin polarization (P). It should also improve the performance of conventional magnetic random access memory (MRAM) devices in which the ON/OFF ratio has been limited to a small value due to a decrease in P near the tunnel barrier.

KW - All-solid-state

KW - Magnetite

KW - Magnetoresistance

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KW - Solid state ionics

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