In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

T. Tsuchiya; T. Taniwatari; K. Uomi; T. Kawano; Y. Ono

doi:10.1109/ICIPRM.1992.235554

In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

T. Tsuchiya, T. Taniwatari, K. Uomi, T. Kawano, Y. Ono

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Metalorganic chemical vapor deposition (MOVPE) has been intensively studied for thinlayer growth along with molecular beam epitaxy (MBE). Recently, in-situ monitoring has become more important for the evaluation and the precise control of epitaxial growth. In MBE, reflection high-energy electron diffraction (RHEED) (1) has often been used for the in-situ monitoring. RHEED, however, can not be applied to MOVPE due to its relatively high growth pressure (>10 torr). Therefore, only a few methods (2) not sensitive to growth pressure, have been reported for in-situ monitoring in MOVPE. In this paper, in-situ X-ray monitoring is introduced, for the first time, in MOVPE. Moreover, feedback growth of InGaAs composition is demonstrated using the insitu X-ray monitoring.

Original language	English
Title of host publication	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	646-649
Number of pages	4
ISBN (Electronic)	0780305221, 9780780305229
DOIs	https://doi.org/10.1109/ICIPRM.1992.235554
Publication status	Published - 1992 Jan 1
Externally published	Yes
Event	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States Duration: 1992 Apr 21 → 1992 Apr 24

Publication series

Name	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

Conference	LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
Country/Territory	United States
City	Newport
Period	92/4/21 → 92/4/24

ASJC Scopus subject areas

Hardware and Architecture
Electronic, Optical and Magnetic Materials
Computer Networks and Communications
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ICIPRM.1992.235554

Cite this

Tsuchiya, T., Taniwatari, T., Uomi, K., Kawano, T., & Ono, Y. (1992). In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 (pp. 646-649). Article 235554 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.1992.235554

In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. / Tsuchiya, T.; Taniwatari, T.; Uomi, K. et al.
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 646-649 235554 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsuchiya, T, Taniwatari, T, Uomi, K, Kawano, T & Ono, Y 1992, In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. in LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992., 235554, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Institute of Electrical and Electronics Engineers Inc., pp. 646-649, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992, Newport, United States, 92/4/21. https://doi.org/10.1109/ICIPRM.1992.235554

Tsuchiya T, Taniwatari T, Uomi K, Kawano T, Ono Y. In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. In LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 646-649. 235554. (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992). doi: 10.1109/ICIPRM.1992.235554

Tsuchiya, T. ; Taniwatari, T. ; Uomi, K. et al. / In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs. LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 646-649 (LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992).

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abstract = "Metalorganic chemical vapor deposition (MOVPE) has been intensively studied for thinlayer growth along with molecular beam epitaxy (MBE). Recently, in-situ monitoring has become more important for the evaluation and the precise control of epitaxial growth. In MBE, reflection high-energy electron diffraction (RHEED) (1) has often been used for the in-situ monitoring. RHEED, however, can not be applied to MOVPE due to its relatively high growth pressure (>10 torr). Therefore, only a few methods (2) not sensitive to growth pressure, have been reported for in-situ monitoring in MOVPE. In this paper, in-situ X-ray monitoring is introduced, for the first time, in MOVPE. Moreover, feedback growth of InGaAs composition is demonstrated using the insitu X-ray monitoring.",

author = "T. Tsuchiya and T. Taniwatari and K. Uomi and T. Kawano and Y. Ono",

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AU - Ono, Y.

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AB - Metalorganic chemical vapor deposition (MOVPE) has been intensively studied for thinlayer growth along with molecular beam epitaxy (MBE). Recently, in-situ monitoring has become more important for the evaluation and the precise control of epitaxial growth. In MBE, reflection high-energy electron diffraction (RHEED) (1) has often been used for the in-situ monitoring. RHEED, however, can not be applied to MOVPE due to its relatively high growth pressure (>10 torr). Therefore, only a few methods (2) not sensitive to growth pressure, have been reported for in-situ monitoring in MOVPE. In this paper, in-situ X-ray monitoring is introduced, for the first time, in MOVPE. Moreover, feedback growth of InGaAs composition is demonstrated using the insitu X-ray monitoring.

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ER -

In-situ X-ray monitoring in MOVPE and feedback growth of strained InGaAs

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