TY - GEN
T1 - InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation
AU - Hiraishi, Y.
AU - Shirai, T.
AU - Kwoen, J.
AU - Matushima, Y.
AU - Ishikawa, H.
AU - Arakawa, Y.
AU - Utaka, K.
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.
AB - In this paper, we applied the quantum dot intermixing (QDI) technique developed for 1550nm-band InAs QD to 1300nm-band InAs/GaAs QD. Two methods of defect introduction for QDI were employed such as ICP-RIE (Ar+) and ion implantation (B+). As a result, about 80nm PL wavelength peak shift was obtained for ICP-RIE when annealing was performed at 575°C, after etching down to 450 nm to the QD layer. On the other hand, about 110nm wavelength shift was obtained for B+ implantation at an acceleration voltage of 120 keV and a dose of 1.0 × 1014/cm2 and subsequent annealing.
KW - ICP-RIE
KW - InAs/GaAs QD
KW - QDI
KW - ion implantation
UR - http://www.scopus.com/inward/record.url?scp=85072978000&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072978000&partnerID=8YFLogxK
U2 - 10.1109/ICIPRM.2019.8819072
DO - 10.1109/ICIPRM.2019.8819072
M3 - Conference contribution
AN - SCOPUS:85072978000
T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Compound Semiconductor Week, CSW 2019
Y2 - 19 May 2019 through 23 May 2019
ER -