TY - GEN
T1 - Increase of crosstalk noise due to imbalanced threshold voltage between NMOS and PMOS in sub-threshold logic circuits
AU - Fuketa, Hiroshi
AU - Takahashi, Ryo
AU - Takamiya, Makoto
AU - Nomura, Masahiro
AU - Shinohara, Hirofumi
AU - Sakurai, Takayasu
PY - 2012/11/26
Y1 - 2012/11/26
N2 - Abnormal increase of the crosstalk noise in the sub-threshold logic circuits is found for the first time. When the threshold voltages (V TH) of nMOS and pMOS are imbalanced and the on-resistance of the aggressor driver is much lower than that of the victim driver, the large crosstalk noise is observed, because the on-resistance has an exponential dependence on VTH in the sub-threshold circuits. In this paper, the large crosstalk noise due to the imbalanced VTH is measured. A new crosstalk noise model is also proposed and verified with SPICE simulations. In a crosstalk noise test chip with 1.5-mm wire in a 40-nm CMOS at the power supply voltage (VDD) of 0.3V, the measured noise amplitude increases from 32% of VDD to 71% of VDD, when the imbalanced V TH is realized by tuning a body bias in pMOS. In the worst case fast-nMOS/slow-pMOS corner simulations, the noise amplitude increases from 47% of VDD to 68% of VDD, when VDD is reduced from 1.1V to 0.3V, which is explained by the proposed model.
AB - Abnormal increase of the crosstalk noise in the sub-threshold logic circuits is found for the first time. When the threshold voltages (V TH) of nMOS and pMOS are imbalanced and the on-resistance of the aggressor driver is much lower than that of the victim driver, the large crosstalk noise is observed, because the on-resistance has an exponential dependence on VTH in the sub-threshold circuits. In this paper, the large crosstalk noise due to the imbalanced VTH is measured. A new crosstalk noise model is also proposed and verified with SPICE simulations. In a crosstalk noise test chip with 1.5-mm wire in a 40-nm CMOS at the power supply voltage (VDD) of 0.3V, the measured noise amplitude increases from 32% of VDD to 71% of VDD, when the imbalanced V TH is realized by tuning a body bias in pMOS. In the worst case fast-nMOS/slow-pMOS corner simulations, the noise amplitude increases from 47% of VDD to 68% of VDD, when VDD is reduced from 1.1V to 0.3V, which is explained by the proposed model.
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U2 - 10.1109/CICC.2012.6330689
DO - 10.1109/CICC.2012.6330689
M3 - Conference contribution
AN - SCOPUS:84869444394
SN - 9781467315555
T3 - Proceedings of the Custom Integrated Circuits Conference
BT - Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, CICC 2012
T2 - 34th Annual Custom Integrated Circuits Conference, CICC 2012
Y2 - 9 September 2012 through 12 September 2012
ER -