Increase of the resistivity of electroless-deposited high-Bs CoNiFeB thin films

Masataka Sobue; Takayuki Segawa; Tokihiko Yokoshima; Tetsuya Osaka; Daiju Kaneko; Atsushi Tanaka

doi:10.1109/TMAG.2002.802676

Increase of the resistivity of electroless-deposited high-B_s CoNiFeB thin films

Masataka Sobue^*, Takayuki Segawa, Tokihiko Yokoshima, Tetsuya Osaka, Daiju Kaneko, Atsushi Tanaka

^*Corresponding author for this work

Research Organization for Nano & Life Innovation

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

In order to increase the resistivity of electroless-deposited high-B_s CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, B_s = 17-17.5 kG and H_c < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH₂ group causes electron scattering, leading to an increase in the resistivity.

Original language	English
Pages (from-to)	2228-2230
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	38
Issue number	5 I
DOIs	https://doi.org/10.1109/TMAG.2002.802676
Publication status	Published - 2002 Sept
Event	2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands Duration: 2002 Apr 28 → 2002 May 2

Keywords

Additives
CoNiFe
Electroless deposition
High B
Organic
Resistivity
Soft magnetic thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2002.802676

Cite this

@article{a06de6494c4f4e1dbf90a54d134aa6db,

title = "Increase of the resistivity of electroless-deposited high-Bs CoNiFeB thin films",

abstract = "In order to increase the resistivity of electroless-deposited high-Bs CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, Bs = 17-17.5 kG and Hc < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH2 group causes electron scattering, leading to an increase in the resistivity.",

keywords = "Additives, CoNiFe, Electroless deposition, High B, Organic, Resistivity, Soft magnetic thin films",

author = "Masataka Sobue and Takayuki Segawa and Tokihiko Yokoshima and Tetsuya Osaka and Daiju Kaneko and Atsushi Tanaka",

note = "Funding Information: Manuscript received February 14, 200; revised May 23, 2002. This work was supported by the Research for the Future Project “Advanced Research and Development on High Density Magnetic Recording Devices by Means of Atomic Interface Design” of the Japan Society for the Promotion of Science, the Project “Establishment of Molecular Nano-Engineering by Utilizing Nanostructure Arrays and Its Development Into Microsystems” of the Center Of Excellence (COE), and by the Storage Research Consortium (SRC).; 2002 International Magnetics Conference (Intermag 2002) ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

month = sep,

doi = "10.1109/TMAG.2002.802676",

language = "English",

volume = "38",

pages = "2228--2230",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 I",

}

TY - JOUR

T1 - Increase of the resistivity of electroless-deposited high-Bs CoNiFeB thin films

AU - Sobue, Masataka

AU - Segawa, Takayuki

AU - Yokoshima, Tokihiko

AU - Osaka, Tetsuya

AU - Kaneko, Daiju

AU - Tanaka, Atsushi

N1 - Funding Information: Manuscript received February 14, 200; revised May 23, 2002. This work was supported by the Research for the Future Project “Advanced Research and Development on High Density Magnetic Recording Devices by Means of Atomic Interface Design” of the Japan Society for the Promotion of Science, the Project “Establishment of Molecular Nano-Engineering by Utilizing Nanostructure Arrays and Its Development Into Microsystems” of the Center Of Excellence (COE), and by the Storage Research Consortium (SRC).

PY - 2002/9

Y1 - 2002/9

N2 - In order to increase the resistivity of electroless-deposited high-Bs CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, Bs = 17-17.5 kG and Hc < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH2 group causes electron scattering, leading to an increase in the resistivity.

AB - In order to increase the resistivity of electroless-deposited high-Bs CoNiFeB thin films, it was decided to investigate the effect of adding a β-alanine containing complexing agent to the plating bath. The resistivity (ρ) gradually increased as the β-alanine concentration was increased. CoNiFeB thin films with desirable soft magnetic properties, Bs = 17-17.5 kG and Hc < 3.0 Oe, were obtained under these conditions with ρ value (70-90 μΩ cm) dependant on carbon incorporation in the films. It has been suggested that carbon impurities in the films resulting from the use of the β-alanine complexing agent containing -NH2 group causes electron scattering, leading to an increase in the resistivity.

KW - Additives

KW - CoNiFe

KW - Electroless deposition

KW - High B

KW - Organic

KW - Resistivity

KW - Soft magnetic thin films

UR - http://www.scopus.com/inward/record.url?scp=0036762048&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036762048&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2002.802676

DO - 10.1109/TMAG.2002.802676

M3 - Conference article

AN - SCOPUS:0036762048

SN - 0018-9464

VL - 38

SP - 2228

EP - 2230

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 I

T2 - 2002 International Magnetics Conference (Intermag 2002)

Y2 - 28 April 2002 through 2 May 2002

ER -