Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.2378726

Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

Original language	English
Article number	182112
Journal	Applied Physics Letters
Volume	89
Issue number	18
DOIs	https://doi.org/10.1063/1.2378726
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2378726

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title = "Increased electron mobility in n -type Si-doped AlN by reducing dislocation density",

abstract = "For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.",

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year = "2006",

doi = "10.1063/1.2378726",

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AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2006

Y1 - 2006

N2 - For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

AB - For n -type Si-doped AlN with a low Si doping concentration of 3× 1017 cm-2, a high room-temperature electron mobility of 426 cm2 V-1 s-1 was achieved, and at 220 K the mobility reached 730 cm2 V-1 s-1, the highest value ever reported for AlN. At Si doping concentrations lower than 1018 cm-3, dislocation scattering is the most dominant scattering mechanism, and the mobility can therefore be increased significantly by reducing the dislocation density.

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ER -

Increased electron mobility in n -type Si-doped AlN by reducing dislocation density

Abstract

ASJC Scopus subject areas

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