Increased rate of ozone adsorption on Si(111)-(7 × 7) with nitrogen preadsorption

Ken Nakamura*, Akira Kurokawa, Shingo Ichimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We observed by surface second harmonic generation (SHG) that initial the rate of second harmonics (SH) intensity decay during ozone adsorption on nitrogen-preadsorbed Si(111) was four times faster than on clean Si(111)-(7 × 7) because of the adsorption not only of atomic oxygen but also of oxygen molecules released by the dissociation of incident ozone molecules. The temperature dependence of the adsorption rate on nitrogen-adsorbed Si(111) was opposite to that on the clean Si(11)-(7 × 7) surface, but similar to that of molecular oxygen on Si(11)-(7 × 7). With increasing surface temperature, the sticking probability lessened in a similar way to that of molecular oxygen. This suggests that the sticking probability of molecular oxygen released by dissociating ozone molecules increases on nitrogen-adsorbed Si(111).

Original languageEnglish
Pages (from-to)165-169
Number of pages5
JournalSurface Science
Publication statusPublished - 1998 May 15
Externally publishedYes


  • Adsorption
  • Nitrogen
  • Ozone
  • Second harmonic generation
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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