We studied the influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN multiple quantum wells (MQWs) mainly in relation to a quantum-confined Stark effect. We performed a systematic time-resolved photoluminescence measurement of MQWs for various carrier densities and three different well widths (2.5, 4.0, and 5.5 nm). We show that the energy shift and the change in carrier lifetime are explained well by the free carrier screening effect which compensates for the internal electric field.
|Number of pages||4|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2002 Sept 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)