Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima; T. Takenobu; M. Motokawa; K. Koide; A. Hashimoto; A. Yamamoto; Y. Saito; T. Yamaguchi; Y. Nanishi

doi:10.1002/pssc.200390064

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

T. Inushima^*, T. Takenobu, M. Motokawa, K. Koide, A. Hashimoto, A. Yamamoto, Y. Saito, T. Yamaguchi, Y. Nanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm ² V ^-1 s ^-1 and the carrier concentrations of 6 × 10 ¹⁸ cm ^-3 ∼ 7 × 10 ¹⁹ cm ^-3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H _c1 and H _c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

Original language	English
Title of host publication	Physica Status Solidi C: Conferences
Pages	364-367
Number of pages	4
Edition	1
DOIs	https://doi.org/10.1002/pssc.200390064
Publication status	Published - 2002
Externally published	Yes
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 2002 Jul 22 → 2002 Jul 25

Other

Other	2nd International Workshop on Nitride Semiconductors, IWN 2002
Country/Territory	Germany
City	Aachen
Period	02/7/22 → 02/7/25

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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Inushima, T, Takenobu, T, Motokawa, M, Koide, K, Hashimoto, A, Yamamoto, A, Saito, Y, Yamaguchi, T & Nanishi, Y 2002, Influence of growth condition on superconducting characteristics of InN on sapphire (0001). in Physica Status Solidi C: Conferences. 1 edn, pp. 364-367, 2nd International Workshop on Nitride Semiconductors, IWN 2002, Aachen, Germany, 02/7/22. https://doi.org/10.1002/pssc.200390064

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title = "Influence of growth condition on superconducting characteristics of InN on sapphire (0001)",

abstract = "In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.",

author = "T. Inushima and T. Takenobu and M. Motokawa and K. Koide and A. Hashimoto and A. Yamamoto and Y. Saito and T. Yamaguchi and Y. Nanishi",

year = "2002",

doi = "10.1002/pssc.200390064",

language = "English",

pages = "364--367",

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T1 - Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

AU - Inushima, T.

AU - Takenobu, T.

AU - Motokawa, M.

AU - Koide, K.

AU - Hashimoto, A.

AU - Yamamoto, A.

AU - Saito, Y.

AU - Yamaguchi, T.

AU - Nanishi, Y.

PY - 2002

Y1 - 2002

N2 - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

AB - In this report we study the influence of the growth condition on the superconducting properties of InN grown on sapphire (0001). The samples are prepared by the use of MBE and MOCVD methods. The investigated InN has the mobilities of about 700 cm 2 V -1 s -1 and the carrier concentrations of 6 × 10 18 cm -3 ∼ 7 × 10 19 cm -3. The samples have clear hexagonal structure and distinct phonon structure with strong plasma reflections. The InN grown by these methods shows resistivity anomaly below 3.7 K and becomes type II superconductor at 0.5 K. The superconductivity of InN is anisotropic and its H c1 and H c2 depend on the angle between the field and the crystal c-axis. The involvement of metal In phase contributes to the characteristics of the superconductivity of InN.

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EP - 367

BT - Physica Status Solidi C: Conferences

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Influence of growth condition on superconducting characteristics of InN on sapphire (0001)

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