Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu; O. P. Agnihotri; S. C. Jain; R. Mertens; Isamo Kato

doi:10.1088/0268-1242/15/3/101

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

B. S. Sahu^*, O. P. Agnihotri, S. C. Jain, R. Mertens, Isamo Kato

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm^-1. The concentration of bonded hydrogen was reduced from 1.2×10²² cm^-3 to 5×10²¹ cm^-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm^-1 at 632.8 nm.

Original language	English
Journal	Semiconductor Science and Technology
Volume	15
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/15/3/101
Publication status	Published - 2000 Mar

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1088/0268-1242/15/3/101

Cite this

@article{69c68c2f45724c31b8cd8f96b6b1e230,

title = "Influence of hydrogen on losses in silicon oxynitride planar optical waveguides",

abstract = "We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.",

author = "Sahu, {B. S.} and Agnihotri, {O. P.} and Jain, {S. C.} and R. Mertens and Isamo Kato",

year = "2000",

month = mar,

doi = "10.1088/0268-1242/15/3/101",

language = "English",

volume = "15",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

AU - Sahu, B. S.

AU - Agnihotri, O. P.

AU - Jain, S. C.

AU - Mertens, R.

AU - Kato, Isamo

PY - 2000/3

Y1 - 2000/3

N2 - We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.

AB - We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm-1. The concentration of bonded hydrogen was reduced from 1.2×1022 cm-3 to 5×1021 cm-3 as the substrate temperature was raised from 100 to 300 °C. The corresponding change in the loss was from 1.5 to 1.2 dB cm-1 at 632.8 nm.

UR - http://www.scopus.com/inward/record.url?scp=0033896034&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033896034&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/15/3/101

DO - 10.1088/0268-1242/15/3/101

M3 - Article

AN - SCOPUS:0033896034

SN - 0268-1242

VL - 15

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this