Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

S. F. Chichibu; T. Onuma; T. Sota; S. P. DenBaars; S. Nakamura; T. Kitamura; Y. Ishida; H. Okumura

doi:10.1063/1.1535746

Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells

S. F. Chichibu^*, T. Onuma, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

^*Corresponding author for this work

School of Advanced Science and Engineering

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54 Citations (Scopus)

Abstract

The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

Original language	English
Pages (from-to)	2051-2054
Number of pages	4
Journal	Journal of Applied Physics
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.1535746
Publication status	Published - 2003 Feb 15

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1535746

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title = "Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells",

abstract = "The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.",

author = "Chichibu, {S. F.} and T. Onuma and T. Sota and DenBaars, {S. P.} and S. Nakamura and T. Kitamura and Y. Ishida and H. Okumura",

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T1 - Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

AU - Chichibu, S. F.

AU - Onuma, T.

AU - Sota, T.

AU - DenBaars, S. P.

AU - Nakamura, S.

AU - Kitamura, T.

AU - Ishida, Y.

AU - Okumura, H.

PY - 2003/2/15

Y1 - 2003/2/15

N2 - The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

AB - The influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells was presented. The importance of fast exciton localization and slow nonradiative recombination was also discussed. It was found that the effective localization depth increased with an increase in InN mole fraction, which give rise to fast exciton localization.

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U2 - 10.1063/1.1535746

DO - 10.1063/1.1535746

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic In_xGa_1-xN/GaN multiple quantum wells

Abstract

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